JPS6186942U - - Google Patents
Info
- Publication number
- JPS6186942U JPS6186942U JP17115884U JP17115884U JPS6186942U JP S6186942 U JPS6186942 U JP S6186942U JP 17115884 U JP17115884 U JP 17115884U JP 17115884 U JP17115884 U JP 17115884U JP S6186942 U JPS6186942 U JP S6186942U
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- concentration diffusion
- low concentration
- semiconductor substrate
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図はこの考案の一実施例の平面図、第２図
は第１図のＡＡ線断面図、第３図は第１図のＢＢ
線断面図、第４図は従来例の平面図、第５図は第
４図のＣＣ線断面図、第６図は第４図のＤＤ線断
面図である。
１１，２１……シリコン基板、１２，２２……
高抵抗層、１３，２３……抵抗層。
Fig. 1 is a plan view of an embodiment of this invention, Fig. 2 is a sectional view taken along line AA in Fig. 1, and Fig. 3 is a sectional view taken along line AA in Fig. 1.
4 is a plan view of the conventional example, FIG. 5 is a sectional view taken along line CC in FIG. 4, and FIG. 6 is a sectional view taken along line DD in FIG. 4. 11, 21... Silicon substrate, 12, 22...
High resistance layer, 13, 23...resistance layer.
Claims (1)
の低濃度拡散層中に形成される高濃度拡散層とよ
り構成される拡散リード。 A diffusion lead is composed of a low concentration diffusion layer provided in a semiconductor substrate and a high concentration diffusion layer formed in the low concentration diffusion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17115884U JPS6186942U (en) | 1984-11-12 | 1984-11-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17115884U JPS6186942U (en) | 1984-11-12 | 1984-11-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6186942U true JPS6186942U (en) | 1986-06-07 |
Family
ID=30728853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17115884U Pending JPS6186942U (en) | 1984-11-12 | 1984-11-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6186942U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108394A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Semiconductor intergrated circuit device |
-
1984
- 1984-11-12 JP JP17115884U patent/JPS6186942U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108394A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Semiconductor intergrated circuit device |