JPH01165661U - - Google Patents
Info
- Publication number
- JPH01165661U JPH01165661U JP6180288U JP6180288U JPH01165661U JP H01165661 U JPH01165661 U JP H01165661U JP 6180288 U JP6180288 U JP 6180288U JP 6180288 U JP6180288 U JP 6180288U JP H01165661 U JPH01165661 U JP H01165661U
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- substrate
- electrode metal
- junction
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の一実施例の断面図、第２図は
本考案の他の実施例の断面図、第３図は従来装置
の断面図である。
１１，２１，３１……シリコン基板、１２，２
２，３２……拡散層、１３……多結晶シリコン層
、３３……高抵抗金属層、１４，２４，３４……
電極金属、１５，２５，３５……シリコン酸化膜
。
FIG. 1 is a cross-sectional view of one embodiment of the present invention, FIG. 2 is a cross-sectional view of another embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional device. 11, 21, 31...Silicon substrate, 12, 2
2, 32... Diffusion layer, 13... Polycrystalline silicon layer, 33... High resistance metal layer, 14, 24, 34...
Electrode metal, 15, 25, 35... silicon oxide film.
Claims (1)
極金属と基板との間に多結晶シリコン層を形成し
たことを特徴とする半導体装置。 A semiconductor rectifier device having a PN junction, characterized in that a polycrystalline silicon layer is formed between an electrode metal and a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6180288U JPH01165661U (en) | 1988-05-10 | 1988-05-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6180288U JPH01165661U (en) | 1988-05-10 | 1988-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01165661U true JPH01165661U (en) | 1989-11-20 |
Family
ID=31287447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6180288U Pending JPH01165661U (en) | 1988-05-10 | 1988-05-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01165661U (en) |
-
1988
- 1988-05-10 JP JP6180288U patent/JPH01165661U/ja active Pending