JPS63128726U - - Google Patents
Info
- Publication number
- JPS63128726U JPS63128726U JP1990687U JP1990687U JPS63128726U JP S63128726 U JPS63128726 U JP S63128726U JP 1990687 U JP1990687 U JP 1990687U JP 1990687 U JP1990687 U JP 1990687U JP S63128726 U JPS63128726 U JP S63128726U
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- utility
- protective film
- scope
- registration request
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
第１図はこの考案をシリコンゲート型ＭＯＳト
ランジスタに適用した場合の拡大断面図、第２図
は従来例の拡大断面図である。
１……シリコン基板、２……拡散層、５……ゲ
ート電極、７……金属電極、１０……アモルフア
スシリコン膜。
FIG. 1 is an enlarged sectional view of this invention applied to a silicon gate type MOS transistor, and FIG. 2 is an enlarged sectional view of a conventional example. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... Diffusion layer, 5... Gate electrode, 7... Metal electrode, 10... Amorphous silicon film.
Claims (1)
終保護膜を形成したことを特徴とする半導体装置
。 A semiconductor device characterized in that a final protective film made of amorphous silicon is formed on a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990687U JPS63128726U (en) | 1987-02-16 | 1987-02-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990687U JPS63128726U (en) | 1987-02-16 | 1987-02-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63128726U true JPS63128726U (en) | 1988-08-23 |
Family
ID=30814924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990687U Pending JPS63128726U (en) | 1987-02-16 | 1987-02-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63128726U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57153436A (en) * | 1981-03-17 | 1982-09-22 | Fujitsu Ltd | Semiconductor device |
-
1987
- 1987-02-16 JP JP1990687U patent/JPS63128726U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57153436A (en) * | 1981-03-17 | 1982-09-22 | Fujitsu Ltd | Semiconductor device |