JPS63118249U - - Google Patents

Info

Publication number
JPS63118249U
JPS63118249U JP840387U JP840387U JPS63118249U JP S63118249 U JPS63118249 U JP S63118249U JP 840387 U JP840387 U JP 840387U JP 840387 U JP840387 U JP 840387U JP S63118249 U JPS63118249 U JP S63118249U
Authority
JP
Japan
Prior art keywords
active layer
gate electrode
schottky junction
cavity
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP840387U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP840387U priority Critical patent/JPS63118249U/ja
Publication of JPS63118249U publication Critical patent/JPS63118249U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の縦断面図、第2図
は従来の縦断面図である。 1……半絶縁性の化合物半導体基板、2……F
ET能動層、3……ゲート電極、4……ゲート長
、5……絶縁膜。
FIG. 1 is a longitudinal sectional view of one embodiment of the present invention, and FIG. 2 is a longitudinal sectional view of a conventional device. 1...Semi-insulating compound semiconductor substrate, 2...F
ET active layer, 3...gate electrode, 4...gate length, 5...insulating film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半絶縁性基板の上面に能動層を有し、該能動層
の上面にゲート電極を有し、該能動層と該ゲート
電極の接触面にシヨツトキー接合を有する電界効
果トランジスタにおいて、該能動層と該ゲート電
極の間に絶縁層又は空洞を有し、該絶縁層又は該
空洞の外周においてシヨツトキー接合を有する電
界効果トランジスタ。
In a field effect transistor having an active layer on the upper surface of a semi-insulating substrate, a gate electrode on the upper surface of the active layer, and a Schottky junction at a contact surface between the active layer and the gate electrode, the active layer and the gate electrode have a Schottky junction. A field effect transistor having an insulating layer or a cavity between gate electrodes, and having a Schottky junction at the outer periphery of the insulating layer or the cavity.
JP840387U 1987-01-22 1987-01-22 Pending JPS63118249U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP840387U JPS63118249U (en) 1987-01-22 1987-01-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP840387U JPS63118249U (en) 1987-01-22 1987-01-22

Publications (1)

Publication Number Publication Date
JPS63118249U true JPS63118249U (en) 1988-07-30

Family

ID=30792746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP840387U Pending JPS63118249U (en) 1987-01-22 1987-01-22

Country Status (1)

Country Link
JP (1) JPS63118249U (en)

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