JPS6183058U - - Google Patents
Info
- Publication number
- JPS6183058U JPS6183058U JP16757784U JP16757784U JPS6183058U JP S6183058 U JPS6183058 U JP S6183058U JP 16757784 U JP16757784 U JP 16757784U JP 16757784 U JP16757784 U JP 16757784U JP S6183058 U JPS6183058 U JP S6183058U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- conductivity type
- field effect
- effect transistor
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 2
- 230000004888 barrier function Effects 0.000 description 2
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の一実施例であるシヨツトキー
バリアーゲートＦＥＴの断面図、第２図は従来の
シヨツトキーバリアーゲートＦＥＴの断面図であ
る。
１……半絶縁性基板、２……ｎ型半導体層、３
……ソース電極、４……ドレン電極、５……ゲー
ト電極、６……酸化膜層。
FIG. 1 is a sectional view of a shot key barrier gate FET which is an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional shot key barrier gate FET. 1... Semi-insulating substrate, 2... N-type semiconductor layer, 3
... Source electrode, 4 ... Drain electrode, 5 ... Gate electrode, 6 ... Oxide film layer.
Claims (1)
と該一導電型半導体層上に設けられたソース電極
とドレン電極とゲート電極とからなる電界効果ト
ランジスタにおいて、前記ゲート電極の一部が酸
化膜を介してドレン電極側にオーバーラツプして
いることを特徴とする電界効果トランジスタ。 In a field effect transistor comprising a semiconductor layer of one conductivity type provided on a semi-insulating substrate, and a source electrode, a drain electrode, and a gate electrode provided on the semiconductor layer of one conductivity type, a portion of the gate electrode is oxidized. A field effect transistor characterized by overlapping a drain electrode side through a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16757784U JPS6183058U (en) | 1984-11-05 | 1984-11-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16757784U JPS6183058U (en) | 1984-11-05 | 1984-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6183058U true JPS6183058U (en) | 1986-06-02 |
Family
ID=30725367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16757784U Pending JPS6183058U (en) | 1984-11-05 | 1984-11-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6183058U (en) |
-
1984
- 1984-11-05 JP JP16757784U patent/JPS6183058U/ja active Pending