JPS63188964U - - Google Patents
Info
- Publication number
- JPS63188964U JPS63188964U JP7989287U JP7989287U JPS63188964U JP S63188964 U JPS63188964 U JP S63188964U JP 7989287 U JP7989287 U JP 7989287U JP 7989287 U JP7989287 U JP 7989287U JP S63188964 U JPS63188964 U JP S63188964U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- electrode side
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の第１の実施例を示す縦断面図
、第２図は同じく本考案の第２の実施例を示す縦
断面図、第３図ａ乃至ｃは本考案によるシヨツト
キ障壁ゲート型電界効果トランジスタの製造方法
を工程順に示す断面図、第４図は従来のシヨツト
キ障壁ゲート型電界効果トランジスタを示す断面
図である。
１１；半絶縁性ＧａＡｓ基板、１２；ｎ型Ｇａ
Ａｓ層、１３；ソース電極、１４；ドレイン電極
、１５；ゲート電極、１６；ゲート電極頭部、２
１；低抵抗領域。
FIG. 1 is a vertical cross-sectional view showing a first embodiment of the present invention, FIG. 2 is a vertical cross-sectional view showing a second embodiment of the present invention, and FIGS. 3 a to 3 c are shot barrier gates according to the present invention. FIG. 4 is a sectional view showing a conventional shot barrier gate type field effect transistor. 11; semi-insulating GaAs substrate, 12; n-type Ga
As layer, 13; source electrode, 14; drain electrode, 15; gate electrode, 16; gate electrode head, 2
1; Low resistance region.
Claims (1)
トの各電極を設けたシヨツトキ障壁ゲート型電界
効果トランジスタにおいて、前記ゲート電極の頭
部は、ソース電極側がドレイン電極側よりも長く
なるように張り出して形成されていることを特徴
とするシヨツトキ障壁ゲート型電界効果トランジ
スタ。 In a shot barrier gate field effect transistor in which source, drain, and gate electrodes are provided on a semiconductor active layer, the head of the gate electrode is formed to protrude so that the source electrode side is longer than the drain electrode side. A short-barrier gate field effect transistor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7989287U JPS63188964U (en) | 1987-05-28 | 1987-05-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7989287U JPS63188964U (en) | 1987-05-28 | 1987-05-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63188964U true JPS63188964U (en) | 1988-12-05 |
Family
ID=30930193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7989287U Pending JPS63188964U (en) | 1987-05-28 | 1987-05-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63188964U (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0366136A (en) * | 1989-08-04 | 1991-03-20 | Fujitsu Ltd | Semiconductor device |
| US7906855B1 (en) | 2008-01-21 | 2011-03-15 | Amkor Technology, Inc. | Stacked semiconductor package and method of making same |
| US8072050B1 (en) | 2008-11-18 | 2011-12-06 | Amkor Technology, Inc. | Semiconductor device with increased I/O leadframe including passive device |
| JP2012147033A (en) * | 2006-11-21 | 2012-08-02 | Cree Inc | Transistor device |
| US8691632B1 (en) | 2002-11-08 | 2014-04-08 | Amkor Technology, Inc. | Wafer level package and fabrication method |
| US8853836B1 (en) | 1998-06-24 | 2014-10-07 | Amkor Technology, Inc. | Integrated circuit package and method of making the same |
| US8900995B1 (en) | 2010-10-05 | 2014-12-02 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
| US8937381B1 (en) | 2009-12-03 | 2015-01-20 | Amkor Technology, Inc. | Thin stackable package and method |
| US8981572B1 (en) | 2011-11-29 | 2015-03-17 | Amkor Technology, Inc. | Conductive pad on protruding through electrode semiconductor device |
| US9129943B1 (en) | 2012-03-29 | 2015-09-08 | Amkor Technology, Inc. | Embedded component package and fabrication method |
| US9159672B1 (en) | 2010-08-02 | 2015-10-13 | Amkor Technology, Inc. | Through via connected backside embedded circuit features structure and method |
| US9184118B2 (en) | 2013-05-02 | 2015-11-10 | Amkor Technology Inc. | Micro lead frame structure having reinforcing portions and method |
| US9184148B2 (en) | 2013-10-24 | 2015-11-10 | Amkor Technology, Inc. | Semiconductor package and method therefor |
| US9275939B1 (en) | 2011-01-27 | 2016-03-01 | Amkor Technology, Inc. | Semiconductor device including leadframe with a combination of leads and lands and method |
| US9324614B1 (en) | 2010-04-06 | 2016-04-26 | Amkor Technology, Inc. | Through via nub reveal method and structure |
| US9362210B2 (en) | 2000-04-27 | 2016-06-07 | Amkor Technology, Inc. | Leadframe and semiconductor package made using the leadframe |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60133761A (en) * | 1983-12-21 | 1985-07-16 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS61156887A (en) * | 1984-12-28 | 1986-07-16 | Fujitsu Ltd | Manufacture of fet |
| JPS61194781A (en) * | 1985-02-23 | 1986-08-29 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
| JPS61240684A (en) * | 1985-04-18 | 1986-10-25 | Nec Corp | Schottky-type field effect transistor and manufacture thereof |
| JPS6399578A (en) * | 1986-10-16 | 1988-04-30 | Nec Corp | Field effect transistor |
-
1987
- 1987-05-28 JP JP7989287U patent/JPS63188964U/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60133761A (en) * | 1983-12-21 | 1985-07-16 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS61156887A (en) * | 1984-12-28 | 1986-07-16 | Fujitsu Ltd | Manufacture of fet |
| JPS61194781A (en) * | 1985-02-23 | 1986-08-29 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
| JPS61240684A (en) * | 1985-04-18 | 1986-10-25 | Nec Corp | Schottky-type field effect transistor and manufacture thereof |
| JPS6399578A (en) * | 1986-10-16 | 1988-04-30 | Nec Corp | Field effect transistor |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0366136A (en) * | 1989-08-04 | 1991-03-20 | Fujitsu Ltd | Semiconductor device |
| US8853836B1 (en) | 1998-06-24 | 2014-10-07 | Amkor Technology, Inc. | Integrated circuit package and method of making the same |
| US8963301B1 (en) | 1998-06-24 | 2015-02-24 | Amkor Technology, Inc. | Integrated circuit package and method of making the same |
| US9224676B1 (en) | 1998-06-24 | 2015-12-29 | Amkor Technology, Inc. | Integrated circuit package and method of making the same |
| US9362210B2 (en) | 2000-04-27 | 2016-06-07 | Amkor Technology, Inc. | Leadframe and semiconductor package made using the leadframe |
| US8952522B1 (en) | 2002-11-08 | 2015-02-10 | Amkor Technology, Inc. | Wafer level package and fabrication method |
| US8691632B1 (en) | 2002-11-08 | 2014-04-08 | Amkor Technology, Inc. | Wafer level package and fabrication method |
| US9406645B1 (en) | 2002-11-08 | 2016-08-02 | Amkor Technology, Inc. | Wafer level package and fabrication method |
| US9450081B2 (en) | 2006-11-21 | 2016-09-20 | Cree, Inc. | High voltage GaN transistor |
| JP2012178593A (en) * | 2006-11-21 | 2012-09-13 | Cree Inc | Transistor device |
| JP2012147033A (en) * | 2006-11-21 | 2012-08-02 | Cree Inc | Transistor device |
| US7906855B1 (en) | 2008-01-21 | 2011-03-15 | Amkor Technology, Inc. | Stacked semiconductor package and method of making same |
| US8072050B1 (en) | 2008-11-18 | 2011-12-06 | Amkor Technology, Inc. | Semiconductor device with increased I/O leadframe including passive device |
| US8937381B1 (en) | 2009-12-03 | 2015-01-20 | Amkor Technology, Inc. | Thin stackable package and method |
| US9324614B1 (en) | 2010-04-06 | 2016-04-26 | Amkor Technology, Inc. | Through via nub reveal method and structure |
| US9159672B1 (en) | 2010-08-02 | 2015-10-13 | Amkor Technology, Inc. | Through via connected backside embedded circuit features structure and method |
| US8900995B1 (en) | 2010-10-05 | 2014-12-02 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
| US9275939B1 (en) | 2011-01-27 | 2016-03-01 | Amkor Technology, Inc. | Semiconductor device including leadframe with a combination of leads and lands and method |
| US9508631B1 (en) | 2011-01-27 | 2016-11-29 | Amkor Technology, Inc. | Semiconductor device including leadframe with a combination of leads and lands and method |
| US8981572B1 (en) | 2011-11-29 | 2015-03-17 | Amkor Technology, Inc. | Conductive pad on protruding through electrode semiconductor device |
| US9431323B1 (en) | 2011-11-29 | 2016-08-30 | Amkor Technology, Inc. | Conductive pad on protruding through electrode |
| US9129943B1 (en) | 2012-03-29 | 2015-09-08 | Amkor Technology, Inc. | Embedded component package and fabrication method |
| US9184118B2 (en) | 2013-05-02 | 2015-11-10 | Amkor Technology Inc. | Micro lead frame structure having reinforcing portions and method |
| US9184148B2 (en) | 2013-10-24 | 2015-11-10 | Amkor Technology, Inc. | Semiconductor package and method therefor |
| US9543235B2 (en) | 2013-10-24 | 2017-01-10 | Amkor Technology, Inc. | Semiconductor package and method therefor |