JPS6312865U - - Google Patents
Info
- Publication number
- JPS6312865U JPS6312865U JP1387886U JP1387886U JPS6312865U JP S6312865 U JPS6312865 U JP S6312865U JP 1387886 U JP1387886 U JP 1387886U JP 1387886 U JP1387886 U JP 1387886U JP S6312865 U JPS6312865 U JP S6312865U
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- opening
- active layer
- semiconductor active
- narrow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Description
第１図ａ〜ｇは本考案の一実施例によるデユア
ルゲート電界効果トランジスタをその製造工程順
に示す図で、同図ｃ，ｅおよびｇはそれぞれ同図
ｂ，ｄおよびｆのＡ―Ａ′方向の断面図である。
１……半絶縁性ガリウムヒ素基板、２……ｎ型
ガリウムヒ素活性層、３……ソース電極パターン
、４……ドレイン電極パターン、５０……第一ゲ
ート電極パターン、６０……第二ゲート電極パタ
ーン、５′，６′……ゲート電極部、５″，６″
……電極取り出し部。
1A to 1G are views showing a dual-gate field effect transistor according to an embodiment of the present invention in the order of its manufacturing process, and FIGS. FIG. DESCRIPTION OF SYMBOLS 1... Semi-insulating gallium arsenide substrate, 2... N-type gallium arsenide active layer, 3... Source electrode pattern, 4... Drain electrode pattern, 50... First gate electrode pattern, 60... Second gate electrode Pattern, 5', 6'...Gate electrode part, 5'', 6''
...Electrode extraction part.
Claims (1)
半導体活性層に形成された幅広部および幅狭部を
有する開孔と、該開孔の幅狭部を横切つて前記半
導体活性層と接するゲート電極部および該ゲート
電極部の前記開孔の幅狭部における部分から前記
開孔の幅広部に延在するゲート電極取り出し部を
有するゲート電極と、該ゲート電極を挾んで対向
するソースおよびドレイン電極とを含むことを特
徴とする電界効果トランジスタ。 A semiconductor active layer formed on a high resistivity layer, an opening formed in the semiconductor active layer having a wide part and a narrow part, and a semiconductor active layer extending across the narrow part of the opening. a gate electrode having a contacting gate electrode portion and a gate electrode extraction portion extending from a portion of the gate electrode portion in the narrow portion of the opening to the wide portion of the opening; a source facing with the gate electrode in between; A field effect transistor comprising a drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1387886U JPS6312865U (en) | 1986-01-31 | 1986-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1387886U JPS6312865U (en) | 1986-01-31 | 1986-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6312865U true JPS6312865U (en) | 1988-01-27 |
Family
ID=30803347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1387886U Pending JPS6312865U (en) | 1986-01-31 | 1986-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6312865U (en) |
-
1986
- 1986-01-31 JP JP1387886U patent/JPS6312865U/ja active Pending