JPS63174464U - - Google Patents
Info
- Publication number
- JPS63174464U JPS63174464U JP16149686U JP16149686U JPS63174464U JP S63174464 U JPS63174464 U JP S63174464U JP 16149686 U JP16149686 U JP 16149686U JP 16149686 U JP16149686 U JP 16149686U JP S63174464 U JPS63174464 U JP S63174464U
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel
- thin film
- film transistor
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
第１図は本考案に係る薄膜トランジスタの一実
施例を示す断面図である。第２図Ａ〜第２図Ｄは
上記実施例の薄膜トランジスタの製造方法を工程
順に示す各断面図であり、第２図Ａはシリコン膜
形成工程を示す図、第２図Ｂはエツチング工程を
示す図、第２図Ｃは酸化およびポリシリコン膜形
成工程を示す図、第２図ＤはＲＩＥ工程を示す図
である。第３図は本考案に係る薄膜トランジスタ
の他の実施例を示す断面図である。
２Ｓ……ソース領域、２Ｄ……ドレイン領域、
２Ｃ……チヤンネル領域、３……二酸化シリコン
膜、４Ｇ……ゲート電極。
FIG. 1 is a sectional view showing an embodiment of a thin film transistor according to the present invention. FIGS. 2A to 2D are cross-sectional views showing the manufacturing method of the thin film transistor of the above embodiment in the order of steps. FIG. 2A is a diagram showing a silicon film forming process, and FIG. 2B is a diagram showing an etching process. FIG. 2C is a diagram showing the oxidation and polysilicon film forming process, and FIG. 2D is a diagram showing the RIE process. FIG. 3 is a sectional view showing another embodiment of the thin film transistor according to the present invention. 2S...source region, 2D...drain region,
2C...Channel region, 3...Silicon dioxide film, 4G...Gate electrode.
Claims (1)
ネル領域を介してソース領域、ドレイン領域がそ
れぞれ形成されてなる薄膜トランジスタにおいて
、 ソース領域およびドレイン領域がこれらの間の
チヤンネル領域よりも厚く形成され、 上記チヤンネル領域上にゲート絶縁膜を介して
ゲート電極が配されてなる薄膜トランジスタ。[Claims for Utility Model Registration] In a thin film transistor in which a source region and a drain region are respectively formed in a semiconductor layer formed on an insulating substrate via a channel region, the source region and the drain region are connected to a channel between them. A thin film transistor formed to be thicker than the channel region, and having a gate electrode disposed on the channel region with a gate insulating film interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16149686U JPS63174464U (en) | 1986-10-23 | 1986-10-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16149686U JPS63174464U (en) | 1986-10-23 | 1986-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63174464U true JPS63174464U (en) | 1988-11-11 |
Family
ID=31087862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16149686U Pending JPS63174464U (en) | 1986-10-23 | 1986-10-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63174464U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154383A (en) * | 1989-11-11 | 1991-07-02 | Takehide Shirato | Semiconductor device |
-
1986
- 1986-10-23 JP JP16149686U patent/JPS63174464U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154383A (en) * | 1989-11-11 | 1991-07-02 | Takehide Shirato | Semiconductor device |