JPH0256462U - - Google Patents
Info
- Publication number
- JPH0256462U JPH0256462U JP13546088U JP13546088U JPH0256462U JP H0256462 U JPH0256462 U JP H0256462U JP 13546088 U JP13546088 U JP 13546088U JP 13546088 U JP13546088 U JP 13546088U JP H0256462 U JPH0256462 U JP H0256462U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- thin film
- drain electrode
- film transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
第１図〜第３図は本考案の第一実施例を示して
おり、第１図はこの実施例に係る薄膜トランジス
タの構成斜視図、第２図は第１図の―面断面
図を示し、第３図Ａ〜Ｌは実施例に係る薄膜トラ
ンジスタの製造工程説明図を夫々示し、第４図〜
第５図は本考案の第二実施例を示しており、第４
図はこの実施例に係る薄膜トランジスタの構成斜
視図、第５図は第４図の―面断面図を示し、
第６図〜第７図は本考案の第三実施例を示してお
り、第６図はこの実施例に係る薄膜トランジスタ
の構成斜視図、第７図は第６図の―面断面図
を示し、また、第８図及び第１１図は従来におけ
る薄膜トランジスタの構成斜視図、第９図は第８
図の―面断面図、第１２図は第１１図の
―面断面図、第１０図Ａ〜Ｃ及び第１３
図Ａ〜Ｃはこれ等薄膜トランジスタの製造工程の
一部を示す説明図である。
符号説明、１……基板、２……ゲート電極、３
……ゲート絶縁膜、４……通電部、５……第一ア
モルフアス半導体層、７……ソース電極、８……
ドレイン電極。
1 to 3 show a first embodiment of the present invention, FIG. 1 is a perspective view of the configuration of a thin film transistor according to this embodiment, and FIG. 2 is a cross-sectional view taken along the plane of FIG. 3A to 3L show explanatory diagrams of the manufacturing process of the thin film transistor according to the example, and FIGS.
FIG. 5 shows a second embodiment of the present invention, and a fourth embodiment of the present invention is shown in FIG.
The figure shows a perspective view of the configuration of a thin film transistor according to this embodiment, and FIG.
6 to 7 show a third embodiment of the present invention, FIG. 6 is a perspective view of the structure of a thin film transistor according to this embodiment, and FIG. 7 is a cross-sectional view taken along the plane of FIG. 8 and 11 are perspective views of the structure of conventional thin film transistors, and FIG. 9 is a perspective view of a conventional thin film transistor.
Figure 12 is a cross-sectional view of Figure 11, Figures 10 A to C and 13 are
Figures A to C are explanatory diagrams showing a part of the manufacturing process of these thin film transistors. Explanation of symbols, 1...Substrate, 2...Gate electrode, 3
...Gate insulating film, 4... Current carrying part, 5... First amorphous semiconductor layer, 7... Source electrode, 8...
drain electrode.
Claims (1)
と、この半導体層に接続されたソース・ドレイン
電極と、絶縁層を介し上記半導体層に対向して配
置されたゲート電極とを備える薄膜トランジスタ
において、 上記ソース電極とドレイン電極間の半導体層の
一部に良導電性の通電部を積層したことを特徴と
する薄膜トランジスタ。[Claims for Utility Model Registration] An insulating substrate, a semiconductor layer provided on this substrate, a source/drain electrode connected to this semiconductor layer, and an insulating substrate disposed opposite to the semiconductor layer with an insulating layer interposed therebetween. A thin film transistor comprising a gate electrode, characterized in that a highly conductive current-carrying part is laminated on a part of the semiconductor layer between the source electrode and the drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988135460U JPH0747876Y2 (en) | 1988-10-19 | 1988-10-19 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988135460U JPH0747876Y2 (en) | 1988-10-19 | 1988-10-19 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0256462U true JPH0256462U (en) | 1990-04-24 |
| JPH0747876Y2 JPH0747876Y2 (en) | 1995-11-01 |
Family
ID=31395107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988135460U Expired - Lifetime JPH0747876Y2 (en) | 1988-10-19 | 1988-10-19 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0747876Y2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009231821A (en) * | 2008-02-29 | 2009-10-08 | Semiconductor Energy Lab Co Ltd | Thin-film transistor and display device |
| JP2009239263A (en) * | 2008-03-01 | 2009-10-15 | Semiconductor Energy Lab Co Ltd | Thin-film transistor and display device |
| JP2010199566A (en) * | 2009-01-30 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
| US8558236B2 (en) | 2007-12-03 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2018509761A (en) * | 2015-05-11 | 2018-04-05 | 深▲セン▼市華星光電技術有限公司 | Coplanar oxide semiconductor TFT substrate structure and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235569A (en) * | 1985-08-09 | 1987-02-16 | Agency Of Ind Science & Technol | Mis type transistor and manufacture thereof |
| JPS63258072A (en) * | 1987-04-15 | 1988-10-25 | Nec Corp | Field-effect transistor |
-
1988
- 1988-10-19 JP JP1988135460U patent/JPH0747876Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235569A (en) * | 1985-08-09 | 1987-02-16 | Agency Of Ind Science & Technol | Mis type transistor and manufacture thereof |
| JPS63258072A (en) * | 1987-04-15 | 1988-10-25 | Nec Corp | Field-effect transistor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8558236B2 (en) | 2007-12-03 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2009231821A (en) * | 2008-02-29 | 2009-10-08 | Semiconductor Energy Lab Co Ltd | Thin-film transistor and display device |
| JP2009239263A (en) * | 2008-03-01 | 2009-10-15 | Semiconductor Energy Lab Co Ltd | Thin-film transistor and display device |
| JP2010199566A (en) * | 2009-01-30 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
| JP2018509761A (en) * | 2015-05-11 | 2018-04-05 | 深▲セン▼市華星光電技術有限公司 | Coplanar oxide semiconductor TFT substrate structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0747876Y2 (en) | 1995-11-01 |
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