JPH0221735U - - Google Patents
Info
- Publication number
- JPH0221735U JPH0221735U JP10025588U JP10025588U JPH0221735U JP H0221735 U JPH0221735 U JP H0221735U JP 10025588 U JP10025588 U JP 10025588U JP 10025588 U JP10025588 U JP 10025588U JP H0221735 U JPH0221735 U JP H0221735U
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor layer
- electrode
- gate
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
Description
第１図は本考案の一実施例を示す薄膜トランジ
スタの断面図、第２図は従来の薄膜トランジスタ
の断面図である。
１……基板、Ｇ……ゲート電極、２……ゲート
絶縁膜、３……ａ―Ｓｉ半導体層、３ａ……ｉ―
ａ―Ｓｉ層、ｎ＋―ａ―Ｓｉ層、Ｓ……ソース電
極、Ｄ……ドレイン電極、４……Ｔｉ膜、５……
Ｃｒ膜、６……Ａｌ膜。
FIG. 1 is a sectional view of a thin film transistor showing an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional thin film transistor. DESCRIPTION OF SYMBOLS 1...Substrate, G...Gate electrode, 2...Gate insulating film, 3...a-Si semiconductor layer, 3a...i-
a-Si layer, n + -a-Si layer, S... source electrode, D... drain electrode, 4... Ti film, 5...
Cr film, 6...Al film.
Claims (1)
極を覆うゲート絶縁膜と、このゲート絶縁膜上に
前記ゲート電極と対向させて形成されたａ―Ｓｉ
半導体層と、この半導体層の上に形成されたソー
ス電極およびドレイン電極とからなる薄膜トラン
ジスタにおいて、前記ソース電極およびドレイン
電極を、半導体層側から順に、極薄のＴｉ膜と、
極薄のＣｒ膜と、膜厚の厚いＡｌまたはＡｌ合金
膜とを積層した三層構造としたことを特徴とする
薄膜トランジスタ。 A gate electrode formed on a substrate surface, a gate insulating film covering this gate electrode, and an a-Si formed on this gate insulating film to face the gate electrode.
In a thin film transistor comprising a semiconductor layer and a source electrode and a drain electrode formed on the semiconductor layer, the source electrode and the drain electrode are formed in order from the semiconductor layer side with an extremely thin Ti film,
A thin film transistor characterized by having a three-layer structure in which an extremely thin Cr film and a thick Al or Al alloy film are laminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10025588U JPH064597Y2 (en) | 1988-07-28 | 1988-07-28 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10025588U JPH064597Y2 (en) | 1988-07-28 | 1988-07-28 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0221735U true JPH0221735U (en) | 1990-02-14 |
| JPH064597Y2 JPH064597Y2 (en) | 1994-02-02 |
Family
ID=31328173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10025588U Expired - Lifetime JPH064597Y2 (en) | 1988-07-28 | 1988-07-28 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH064597Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012086540A1 (en) * | 2010-12-21 | 2012-06-28 | シャープ株式会社 | Thin-film transistor and method for manufacturing thin-film transistor |
-
1988
- 1988-07-28 JP JP10025588U patent/JPH064597Y2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012086540A1 (en) * | 2010-12-21 | 2012-06-28 | シャープ株式会社 | Thin-film transistor and method for manufacturing thin-film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH064597Y2 (en) | 1994-02-02 |