JPH0279063U - - Google Patents
Info
- Publication number
- JPH0279063U JPH0279063U JP1988158044U JP15804488U JPH0279063U JP H0279063 U JPH0279063 U JP H0279063U JP 1988158044 U JP1988158044 U JP 1988158044U JP 15804488 U JP15804488 U JP 15804488U JP H0279063 U JPH0279063 U JP H0279063U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- step portion
- oxide film
- tunnel oxide
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Description
第１図は本考案の一実施例を示す薄膜メモリ素
子の断面図、第２図は本考案の他の実施例を示す
薄膜メモリ素子の断面図、第３図〜第５図はそれ
ぞれ従来のメモリ素子の断面図である。
２１……絶縁基板、２２……ゲート電極、２３
……ゲート絶縁膜、２４……トンネル酸化膜、２
４ａ……トンネル領域、２５……半導体層、２６
……ソース電極、２７……ドレイン電極。
FIG. 1 is a sectional view of a thin film memory device showing one embodiment of the present invention, FIG. 2 is a sectional view of a thin film memory device showing another embodiment of the present invention, and FIGS. FIG. 2 is a cross-sectional view of a memory element. 21... Insulating substrate, 22... Gate electrode, 23
...Gate insulating film, 24...Tunnel oxide film, 2
4a... Tunnel region, 25... Semiconductor layer, 26
... Source electrode, 27 ... Drain electrode.
Claims (1)
、半導体層と、ソース、ドレイン電極を積層形成
するとともに、前記ゲート絶縁膜と前記半導体層
または前記ソース、ドレイン電極との間にトンネ
ル酸化膜を形成し、かつ前記トンネル酸化膜のう
ち、このトンネル酸化膜の下の電極または半導体
層の側縁の段差部に対応する段差部分をトンネル
領域としたことを特徴とする薄膜メモリ素子。 A gate electrode, a gate insulating film, a semiconductor layer, and a source and drain electrode are stacked on an insulating substrate, and a tunnel oxide film is provided between the gate insulating film and the semiconductor layer or the source and drain electrodes. 1. A thin film memory element, wherein a step portion of the tunnel oxide film corresponding to a step portion of an electrode under the tunnel oxide film or a step portion of a side edge of a semiconductor layer is used as a tunnel region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988158044U JPH0279063U (en) | 1988-12-06 | 1988-12-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988158044U JPH0279063U (en) | 1988-12-06 | 1988-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0279063U true JPH0279063U (en) | 1990-06-18 |
Family
ID=31438017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988158044U Pending JPH0279063U (en) | 1988-12-06 | 1988-12-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0279063U (en) |
-
1988
- 1988-12-06 JP JP1988158044U patent/JPH0279063U/ja active Pending