JPH028055U - - Google Patents
Info
- Publication number
- JPH028055U JPH028055U JP8299388U JP8299388U JPH028055U JP H028055 U JPH028055 U JP H028055U JP 8299388 U JP8299388 U JP 8299388U JP 8299388 U JP8299388 U JP 8299388U JP H028055 U JPH028055 U JP H028055U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode
- film transistor
- sensor
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
第１図および第２図は本考案の一実施例を示す
薄膜光センサの断面図およびその等価回路図、第
３図は本考案に薄膜光センサを用いたイメージセ
ンサの回路図、第４図は本考案の他の実施例を示
す薄膜光センサの断面図、第５図および第６図は
それぞれ従来の薄膜光センサの断面図、第７図は
従来の薄膜光センサの等価回路図である。
１１……基板、Ｔ１……センサ用薄膜トランジ
スタ、Ｇ１……ゲート電極、Ｓ１……ソース電極
、Ｄ１……ドレイン電極、Ｔ２……センサ用薄膜
トランジスタ、Ｇ２……ゲート電極、Ｓ２……ソ
ース電極、Ｄ２……ドレイン電極、１２……ゲー
ト絶縁膜、１３……半導体層、１４……コンタク
ト層、１５……接続電極、Ｃａ……キヤパシタ用
電極、Ｃ……キヤパシタ、１６……透明絶縁膜。
1 and 2 are a sectional view and an equivalent circuit diagram of a thin film optical sensor showing an embodiment of the present invention, FIG. 3 is a circuit diagram of an image sensor using the thin film optical sensor according to the present invention, and FIG. 4 is a sectional view of a thin film optical sensor showing another embodiment of the present invention, FIGS. 5 and 6 are sectional views of a conventional thin film optical sensor, and FIG. 7 is an equivalent circuit diagram of a conventional thin film optical sensor. . 11...Substrate, T1 ...Sensor thin film transistor, G1 ...Gate electrode, S1 ...Source electrode, D1 ...Drain electrode, T2 ...Sensor thin film transistor, G2 ...Gate electrode, S 2 ...Source electrode, D2 ...Drain electrode, 12...Gate insulating film, 13...Semiconductor layer, 14...Contact layer, 15...Connection electrode, Ca...Capacitor electrode, C...Capacitor, 16...Transparent insulating film.
Claims (1)
ング用薄膜トランジスタとを形成するとともに、
前記センサ用薄膜トランジスタのドレイン電極と
前記スイツチング用薄膜トランジスタのソース電
極とをこの両電極と一体の接続電極を介して接続
し、かつ前記センサ用薄膜トランジスタのドレイ
ンにキヤパシタを接続した薄膜光センサにおいて
、前記接続電極と対向させてキヤパシタ用電極を
配置し、このキヤパシタ用電極を前記センサ用薄
膜トランジスタのゲート電極と一体の電極とする
とともに、前記センサ用薄膜トランジスタのゲー
ト電極とソース電極とを接合したことを特徴とす
る薄膜光センサ。 In addition to forming a sensor thin film transistor and a switching thin film transistor on the substrate surface,
In the thin film optical sensor, the drain electrode of the sensor thin film transistor and the source electrode of the switching thin film transistor are connected through a connecting electrode integral with both electrodes, and a capacitor is connected to the drain of the sensor thin film transistor, and the connection A capacitor electrode is disposed to face the electrode, the capacitor electrode is integrated with the gate electrode of the sensor thin film transistor, and the gate electrode and source electrode of the sensor thin film transistor are bonded. thin film optical sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8299388U JPH028055U (en) | 1988-06-24 | 1988-06-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8299388U JPH028055U (en) | 1988-06-24 | 1988-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028055U true JPH028055U (en) | 1990-01-18 |
Family
ID=31307727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8299388U Pending JPH028055U (en) | 1988-06-24 | 1988-06-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028055U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02246272A (en) * | 1989-03-20 | 1990-10-02 | Hitachi Ltd | Two-dimensional photosensor array |
| JPH05110049A (en) * | 1991-10-21 | 1993-04-30 | Nec Corp | Infrared solid state imaging element and manufacture thereof |
| US7211880B2 (en) | 2002-08-30 | 2007-05-01 | Sharp Kabushiki Kaisha | Photoelectric conversion apparatus and manufacturing method of same |
| JP2008153427A (en) * | 2006-12-18 | 2008-07-03 | Hitachi Displays Ltd | High sensitive optical sensor element and optical sensor device using it |
| US7462863B2 (en) | 2002-07-11 | 2008-12-09 | Sharp Kabushiki Kaisha | Thin film phototransistor, active matrix substrate using the phototransistor, and image scanning device using the substrate |
-
1988
- 1988-06-24 JP JP8299388U patent/JPH028055U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02246272A (en) * | 1989-03-20 | 1990-10-02 | Hitachi Ltd | Two-dimensional photosensor array |
| JPH05110049A (en) * | 1991-10-21 | 1993-04-30 | Nec Corp | Infrared solid state imaging element and manufacture thereof |
| US7462863B2 (en) | 2002-07-11 | 2008-12-09 | Sharp Kabushiki Kaisha | Thin film phototransistor, active matrix substrate using the phototransistor, and image scanning device using the substrate |
| US7211880B2 (en) | 2002-08-30 | 2007-05-01 | Sharp Kabushiki Kaisha | Photoelectric conversion apparatus and manufacturing method of same |
| JP2008153427A (en) * | 2006-12-18 | 2008-07-03 | Hitachi Displays Ltd | High sensitive optical sensor element and optical sensor device using it |