JPH0328762U - - Google Patents
Info
- Publication number
- JPH0328762U JPH0328762U JP8862989U JP8862989U JPH0328762U JP H0328762 U JPH0328762 U JP H0328762U JP 8862989 U JP8862989 U JP 8862989U JP 8862989 U JP8862989 U JP 8862989U JP H0328762 U JPH0328762 U JP H0328762U
- Authority
- JP
- Japan
- Prior art keywords
- gate insulating
- film
- insulating film
- amorphous
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
第１図は、この考案のアモルフアスシリコン薄
膜トランジスタの構造の一実施例を示す概略的断
面図、第２図は、従来のアモルフアスシリコン薄
膜トランジスタの構造を示す断面図、第３図〜第
６図は、この考案のアモルフアスシリコン薄膜ト
ランジスタの特性を説明するための曲線図である
。
２０……絶縁性基板、２１……ゲート電極、２
２……ゲート絶縁膜、２３……第１ゲート絶縁膜
、２４……第２ゲート絶縁膜、２５……活性層、
２６……凹部、２７……ソース電極、２８……ド
レイン電極。
FIG. 1 is a schematic cross-sectional view showing an example of the structure of the amorphous silicon thin film transistor of this invention, FIG. 2 is a cross-sectional view showing the structure of a conventional amorphous silicon thin film transistor, and FIGS. 3 to 6 is a curve diagram for explaining the characteristics of the amorphous silicon thin film transistor of this invention. 20... Insulating substrate, 21... Gate electrode, 2
2... Gate insulating film, 23... First gate insulating film, 24... Second gate insulating film, 25... Active layer,
26... recess, 27... source electrode, 28... drain electrode.
Claims (1)
るゲート電極と、該ゲート電極上に形成されたゲ
ート絶縁膜と、該ゲート絶縁膜上に形成されたア
モルフアスシリコンからなる活性層と、該活性層
上に形成されたソース電極およびドレイン電極と
を具えたアモルフアスシリコン薄膜トランジスタ
において、 ゲート絶縁膜を、ゲート電極側から順次に設け
た第１および第２ゲート絶縁膜を以つて構成し、 該第１ゲート絶縁膜を、誘電率が第２ゲート絶
縁膜の誘電率よりも大きな材料で、膜厚１００ｎ
ｍ以上２００ｎｍ以下の膜として形成し、 前記第２ゲート絶縁膜を膜厚１３０ｎｍ以上２
００ｎｍ以下のシリコン窒化膜として形成してな
る ことを特徴とするアモルフアスシリコン薄膜ト
ランジスタ。 (2) 請求項１に記載の第１ゲート絶縁膜を五酸
化タンタル膜としたことを特徴とするアモルフア
スシリコン薄膜トランジスタ。[Claims for Utility Model Registration] (1) A gate electrode made of tantalum formed on an insulating substrate, a gate insulating film formed on the gate electrode, and an amorphous amorphous atom formed on the gate insulating film. In an amorphous silicon thin film transistor comprising an active layer made of silicon and a source electrode and a drain electrode formed on the active layer, first and second gate insulating films are provided in order from the gate electrode side. The first gate insulating film is made of a material having a dielectric constant larger than that of the second gate insulating film, and has a film thickness of 100 nm.
m or more and 200 nm or less, and the second gate insulating film has a film thickness of 130 nm or more and 200 nm or more.
An amorphous silicon thin film transistor formed as a silicon nitride film with a thickness of 00 nm or less. (2) An amorphous silicon thin film transistor characterized in that the first gate insulating film according to claim 1 is a tantalum pentoxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8862989U JPH0328762U (en) | 1989-07-28 | 1989-07-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8862989U JPH0328762U (en) | 1989-07-28 | 1989-07-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0328762U true JPH0328762U (en) | 1991-03-22 |
Family
ID=31638231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8862989U Pending JPH0328762U (en) | 1989-07-28 | 1989-07-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0328762U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006315696A (en) * | 2005-05-10 | 2006-11-24 | Sanko Co Ltd | Dunnage |
-
1989
- 1989-07-28 JP JP8862989U patent/JPH0328762U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006315696A (en) * | 2005-05-10 | 2006-11-24 | Sanko Co Ltd | Dunnage |
| JP4663393B2 (en) * | 2005-05-10 | 2011-04-06 | 三甲株式会社 | Dunage |
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