JPS62166652U - - Google Patents
Info
- Publication number
- JPS62166652U JPS62166652U JP5399786U JP5399786U JPS62166652U JP S62166652 U JPS62166652 U JP S62166652U JP 5399786 U JP5399786 U JP 5399786U JP 5399786 U JP5399786 U JP 5399786U JP S62166652 U JPS62166652 U JP S62166652U
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- source electrode
- electrode
- gallium arsenide
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図はこの考案の一実施例を示すパターン図
、第２図はこの考案のＦＥＴの断面図、第３図は
本考案のＦＥＴを形成する基板の断面図、第４図
は従来例を示すパターン図、第５図は従来例のＦ
ＥＴの断面図である。
図において、１はゲート電極、２はドレイン電
極、３はソース電極、４は貫通孔、５ａはシリコ
ン基板、７はガリウムヒ素半導体層である。なお
、図中同一あるいは相当部分には同一符号を付し
て示してある。
Fig. 1 is a pattern diagram showing an embodiment of this invention, Fig. 2 is a sectional view of an FET of this invention, Fig. 3 is a sectional view of a substrate forming the FET of this invention, and Fig. 4 is a conventional example. The pattern diagram shown in Fig. 5 is the conventional example F.
It is a sectional view of ET. In the figure, 1 is a gate electrode, 2 is a drain electrode, 3 is a source electrode, 4 is a through hole, 5a is a silicon substrate, and 7 is a gallium arsenide semiconductor layer. It should be noted that the same or corresponding parts in the figures are indicated by the same reference numerals.
Claims (1)
導体活性層の表面に、ゲート電極、ドレイス電極
およびソース電極を形成するとともに、前記ソー
ス電極とシリコン基板を接続させる貫通孔を形成
したことを特徴とする高出力マイクロ波ＦＥＴ。 A high output device characterized in that a gate electrode, a drain electrode, and a source electrode are formed on the surface of a gallium arsenide semiconductor active layer formed on one side of a silicon substrate, and a through hole is formed to connect the source electrode and the silicon substrate. Microwave FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5399786U JPS62166652U (en) | 1986-04-10 | 1986-04-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5399786U JPS62166652U (en) | 1986-04-10 | 1986-04-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62166652U true JPS62166652U (en) | 1987-10-22 |
Family
ID=30880575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5399786U Pending JPS62166652U (en) | 1986-04-10 | 1986-04-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62166652U (en) |
-
1986
- 1986-04-10 JP JP5399786U patent/JPS62166652U/ja active Pending