JPS6183328U - - Google Patents
Info
- Publication number
- JPS6183328U JPS6183328U JP16843284U JP16843284U JPS6183328U JP S6183328 U JPS6183328 U JP S6183328U JP 16843284 U JP16843284 U JP 16843284U JP 16843284 U JP16843284 U JP 16843284U JP S6183328 U JPS6183328 U JP S6183328U
- Authority
- JP
- Japan
- Prior art keywords
- gallium arsenide
- substrate
- arsenide layer
- resonator
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
第1図は本考案第一実施例半導体振動子の断面
図。第2図は電極とたわみ共振子の接合を示す図
。第3図は本考案第二実施例半導体振動子の断面
図。
1…基板、2…n型ガリウム砒素層、3…切れ
目、4…たわみ振動子、5,6…電極、7…増幅
回路。
FIG. 1 is a sectional view of a semiconductor resonator according to a first embodiment of the present invention. FIG. 2 is a diagram showing the connection between an electrode and a flexural resonator. FIG. 3 is a sectional view of a semiconductor resonator according to a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... N-type gallium arsenide layer, 3... Cut, 4... Flexural vibrator, 5, 6... Electrode, 7... Amplifying circuit.
Claims (1)
に形成されたガリウム砒素結晶の基板と、 この基板上に成長させた伝導の型の異なるガリ
ウム砒素層と、 このガリウム砒素層に延長して形成され、この
下の基板部分が空間に形成された構造のたわみ共
振子と、 このたわみ共振子の節の位置に設けられ、圧電
効果によりこのたわみ共振子に歪を与える電極と を備えた半導体共振子。[Claims for Utility Model Registration] A gallium arsenide crystal substrate whose surface is oriented in the [110] plane with respect to the crystal axis direction; a gallium arsenide layer with different conduction types grown on the substrate; A flexible resonator is formed extending from this gallium arsenide layer, and the substrate part below this is formed in space. A semiconductor resonator equipped with an electrode that provides .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16843284U JPH0526821Y2 (en) | 1984-11-05 | 1984-11-05 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16843284U JPH0526821Y2 (en) | 1984-11-05 | 1984-11-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6183328U true JPS6183328U (en) | 1986-06-02 |
JPH0526821Y2 JPH0526821Y2 (en) | 1993-07-07 |
Family
ID=30726201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16843284U Expired - Lifetime JPH0526821Y2 (en) | 1984-11-05 | 1984-11-05 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0526821Y2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0537287A (en) * | 1990-01-03 | 1993-02-12 | Motorola Inc | Ultra-high-frequency oscillator/resonator |
JP2012244349A (en) * | 2011-05-18 | 2012-12-10 | Nippon Telegr & Teleph Corp <Ntt> | Micro mechanical vibrator and method of manufacturing the same |
-
1984
- 1984-11-05 JP JP16843284U patent/JPH0526821Y2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0537287A (en) * | 1990-01-03 | 1993-02-12 | Motorola Inc | Ultra-high-frequency oscillator/resonator |
JP2012244349A (en) * | 2011-05-18 | 2012-12-10 | Nippon Telegr & Teleph Corp <Ntt> | Micro mechanical vibrator and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0526821Y2 (en) | 1993-07-07 |
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