JPS62135435U - - Google Patents
Info
- Publication number
- JPS62135435U JPS62135435U JP2352586U JP2352586U JPS62135435U JP S62135435 U JPS62135435 U JP S62135435U JP 2352586 U JP2352586 U JP 2352586U JP 2352586 U JP2352586 U JP 2352586U JP S62135435 U JPS62135435 U JP S62135435U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- strip line
- integrated circuit
- ground conductor
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000000945 filler Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案装置の１実施例の部分断面図、
第２図は第１図中の―部分の断面図、第３図
は他の実施例の部分断面図である。
１……半導体基板、４……ストリツプ線路、２
……ＦＥＴ（能動素子）、７……接地導体、６…
…凹部。
FIG. 1 is a partial sectional view of one embodiment of the device of the present invention;
FIG. 2 is a cross-sectional view of the portion shown in FIG. 1, and FIG. 3 is a partial cross-sectional view of another embodiment. 1... Semiconductor substrate, 4... Strip line, 2
...FET (active element), 7... Ground conductor, 6...
...concavity.
Claims (1)
設すると共に該ストリツプ線路に接続される能動
デバイスを形成し、前記半導体基板の他面側に前
記ストリツプ線路と共にマイクロ波素子を構成す
る接地導体を形成してなるモノリシツクマイクロ
波集積回路装置において、前記半導体基板は前記
接地導体に直面する表面に凹部を備えていること
を特徴とするモノリシツクマイクロ波集積回路装
置。 (2) 前記凹部内には誘電体物若しくは金属より
なる充填物を充填してなる実用新案登録請求の範
囲第(1)項記載のモノリシツクマイクロ波集積回
路装置。[Claims for Utility Model Registration] (1) A strip line is disposed on one side of a semiconductor substrate, an active device is formed to be connected to the strip line, and a micro device is disposed on the other side of the semiconductor substrate together with the strip line. A monolithic microwave integrated circuit device comprising a ground conductor constituting a wave element, wherein the semiconductor substrate has a recessed portion on a surface facing the ground conductor. . (2) The monolithic microwave integrated circuit device according to claim 1, wherein the recess is filled with a filler made of a dielectric material or a metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2352586U JPS62135435U (en) | 1986-02-20 | 1986-02-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2352586U JPS62135435U (en) | 1986-02-20 | 1986-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62135435U true JPS62135435U (en) | 1987-08-26 |
Family
ID=30821906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2352586U Pending JPS62135435U (en) | 1986-02-20 | 1986-02-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62135435U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998012751A1 (en) * | 1996-09-20 | 1998-03-26 | Hitachi, Ltd. | High-frequency integrated circuit device and its manufacture |
-
1986
- 1986-02-20 JP JP2352586U patent/JPS62135435U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998012751A1 (en) * | 1996-09-20 | 1998-03-26 | Hitachi, Ltd. | High-frequency integrated circuit device and its manufacture |