JPS62147362U - - Google Patents
Info
- Publication number
- JPS62147362U JPS62147362U JP3503686U JP3503686U JPS62147362U JP S62147362 U JPS62147362 U JP S62147362U JP 3503686 U JP3503686 U JP 3503686U JP 3503686 U JP3503686 U JP 3503686U JP S62147362 U JPS62147362 U JP S62147362U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- integrated circuit
- microwave integrated
- relative permittivity
- strip line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案装置の１実施例の部分断面図、
第２図は第１図中の―部分の断面図、第３図
と第４図はストリツプ線路の幅の変化による実効
誘電率と特性インピーダンスの各特性図である。
１……半導体基板、４……ストリツプ線路、２
……能動デバイス、７……接地導体、６……誘電
体層。
FIG. 1 is a partial sectional view of one embodiment of the device of the present invention;
FIG. 2 is a cross-sectional view of the portion shown in FIG. 1... Semiconductor substrate, 4... Strip line, 2
. . . active device, 7 . . . ground conductor, 6 . . . dielectric layer.
補正 昭６１．４．２８
考案の名称を次のように補正する。
考案の名称 モノリシツクマイクロ波集積回
路装置
実用新案登録請求の範囲を次のように補正する
。Amendment April 28, 1981 The name of the invention is amended as follows. Name of the invention: Monolithic microwave integrated circuit device The scope of the claims for utility model registration is amended as follows.
【実用新案登録請求の範囲】
(1) 半導体基板の一面側にマイクロストリツプ
線路を配設すると共に該マイクロストリツプ線路
に接続される能動デバイスを形成し、前記半導体
基板の他面側に接地導体を形成してなるモノリシ
ツクマイクロ波集積回路において、前記半導体基
板の他面と前記接地導体との間に、誘電率が前記
半導体基板を構成する材料より大きい誘電体材料
よりなる誘電体層を備えていることを特徴とする
モノリシツクマイクロ波集積回路装置。
(2) 前記半導体基板はＧａＡｓ材（比誘電率は
約１２．９）であり、前記誘電体層はＴａ２Ｏ５
（比誘電率２０〜２５）やＴｉＯ２（比誘電率約
１００）などの誘電体材料で構成されていること
を特徴とする実用新案登録請求の範囲第(1)項記
載のモノリシツクマイクロ波集積回路装置。[Claims for Utility Model Registration] (1) A microstrip line is provided on one side of a semiconductor substrate, an active device is formed to be connected to the microstrip line, and a ground conductor is provided on the other side of the semiconductor substrate. In the monolithic microwave integrated circuit formed by the semiconductor substrate, a dielectric layer made of a dielectric material having a dielectric constant larger than that of a material constituting the semiconductor substrate is provided between the other surface of the semiconductor substrate and the ground conductor. characterized by
Monolithic microwave integrated circuit device. (2) The semiconductor substrate is a GaAs material (relative permittivity is about 12.9), and the dielectric layer is Ta 2 O 5
The monolithic microwave integrated device according to claim (1) of claim 1, characterized in that it is made of a dielectric material such as TiO 2 (relative permittivity: 20 to 25) or TiO 2 (relative permittivity: about 100). circuit device.
Claims (1)
設すると共に該ストリツプ線路に接続されるる能
動デバイスを形成し、前記半導体基板の他面側に
前記ストリツプ線路と共にマイクロ波素子を構成
する接地導体を形成してなるマイクロ波集積回路
において、前記半導体基板の地面と前記接地導体
との間に、誘電率が前記半導体基板を構成する材
料より大きい誘電体材料よりなる誘電体層を備え
ていることを特徴とするマイクロ波集積回路装置
。 (2) 前記半導体基板はＧａＡｓ材（比誘電率は
約１２．９）であり、前記誘電体層はＴａ２Ｏ５
（比誘電率２０〜２５）やＴｉＯ２（比誘電率約
１００）などの誘電体材料で構成されていること
を特徴とする実用新案登録請求の範囲第(1)項記
載のマイクロ波集積回路装置。[Claims for Utility Model Registration] (1) A strip line is disposed on one side of a semiconductor substrate, and an active device connected to the strip line is formed, and a micro device is disposed on the other side of the semiconductor substrate along with the strip line. In a microwave integrated circuit formed with a ground conductor constituting a wave element, a dielectric material made of a dielectric material having a dielectric constant larger than that of the material constituting the semiconductor substrate is provided between the ground of the semiconductor substrate and the ground conductor. A microwave integrated circuit device comprising a body layer. (2) The semiconductor substrate is a GaAs material (relative permittivity is about 12.9), and the dielectric layer is Ta 2 O 5
The microwave integrated circuit according to claim (1) of claim 1, wherein the microwave integrated circuit is made of a dielectric material such as TiO2 (relative permittivity: 20 to 25) or TiO2 (relative permittivity: approximately 100). Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3503686U JPS62147362U (en) | 1986-03-11 | 1986-03-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3503686U JPS62147362U (en) | 1986-03-11 | 1986-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62147362U true JPS62147362U (en) | 1987-09-17 |
Family
ID=30844157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3503686U Pending JPS62147362U (en) | 1986-03-11 | 1986-03-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62147362U (en) |
-
1986
- 1986-03-11 JP JP3503686U patent/JPS62147362U/ja active Pending