JPS6232520U - - Google Patents

Info

Publication number
JPS6232520U
JPS6232520U JP12307785U JP12307785U JPS6232520U JP S6232520 U JPS6232520 U JP S6232520U JP 12307785 U JP12307785 U JP 12307785U JP 12307785 U JP12307785 U JP 12307785U JP S6232520 U JPS6232520 U JP S6232520U
Authority
JP
Japan
Prior art keywords
ring
main surface
dielectric layer
shaped substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12307785U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12307785U priority Critical patent/JPS6232520U/ja
Publication of JPS6232520U publication Critical patent/JPS6232520U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例に係るリングコンデ
ンサの斜視図、第2図は第1図の―線拡大断
面図、第3図は従来のリングコンデンサの斜視図
、第4図は第3図の―線拡大断面図、第5図
は従来のリングコンデンサの等価回路図、第6図
は静電容量と周波数との関係を示すグラフである
。 1……誘電体層、2……リング状基板、3……
分割電極、4……全面電極。
Fig. 1 is a perspective view of a ring capacitor according to an embodiment of the present invention, Fig. 2 is an enlarged sectional view taken along the line -- in Fig. 1, Fig. 3 is a perspective view of a conventional ring capacitor, and Fig. 4 is a FIG. 5 is an equivalent circuit diagram of a conventional ring capacitor, and FIG. 6 is a graph showing the relationship between capacitance and frequency. 1... Dielectric layer, 2... Ring-shaped substrate, 3...
Divided electrode, 4...Full surface electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体磁器より成るリング状基板の一方の主表
面に分割電極とその直下に誘電体層を形成し、他
方の主表面には全面電極を形成したことを特徴と
するリングコンデンサ。
A ring capacitor characterized in that a ring-shaped substrate made of semiconductor ceramic has a divided electrode and a dielectric layer formed immediately below it on one main surface, and a full-surface electrode formed on the other main surface.
JP12307785U 1985-08-09 1985-08-09 Pending JPS6232520U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12307785U JPS6232520U (en) 1985-08-09 1985-08-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12307785U JPS6232520U (en) 1985-08-09 1985-08-09

Publications (1)

Publication Number Publication Date
JPS6232520U true JPS6232520U (en) 1987-02-26

Family

ID=31013851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12307785U Pending JPS6232520U (en) 1985-08-09 1985-08-09

Country Status (1)

Country Link
JP (1) JPS6232520U (en)

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