JPS6435760U - - Google Patents
Info
- Publication number
- JPS6435760U JPS6435760U JP13077087U JP13077087U JPS6435760U JP S6435760 U JPS6435760 U JP S6435760U JP 13077087 U JP13077087 U JP 13077087U JP 13077087 U JP13077087 U JP 13077087U JP S6435760 U JPS6435760 U JP S6435760U
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- layer
- becomes
- counter electrode
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 3
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案に係る半導体装置の一実施例を
示す断面図、第２図は本考案の金属層の一例を示
す平面図、第３図は金属層の他の例を示す平面図
である。第４図はコンデンサの従来構造例を示す
断面図、第５図は第４図のコンデンサでの金属層
を示す平面図、第６図は従来の問題点を説明する
ためのコンデンサを示す断面図である。
１……基板、２……誘電体層、４……絶縁層、
５……配線層、１０……金属層、ｔ……幅。
FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor device according to the present invention, FIG. 2 is a plan view showing an example of the metal layer of the invention, and FIG. 3 is a plan view showing another example of the metal layer. be. Fig. 4 is a cross-sectional view showing an example of a conventional structure of a capacitor, Fig. 5 is a plan view showing a metal layer in the capacitor shown in Fig. 4, and Fig. 6 is a cross-sectional view showing a conventional capacitor to explain problems. It is. 1...Substrate, 2...Dielectric layer, 4...Insulating layer,
5...Wiring layer, 10...Metal layer, t...Width.
Claims (1)
介して上部対向電極となる金属層を形成し、更に
金属層上に絶縁層を介して配線層を積層形成した
ものであつて、 上記金属層を、その幅が３０μｍ以下の連続し
た線状パターンで形成したことを特徴とする半導
体装置。[Claims for Utility Model Registration] A metal layer that becomes an upper counter electrode is formed on a semiconductor substrate that becomes a lower counter electrode via a dielectric layer, and a wiring layer is further laminated on the metal layer via an insulating layer. A semiconductor device, characterized in that the metal layer is formed in a continuous linear pattern with a width of 30 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13077087U JPS6435760U (en) | 1987-08-27 | 1987-08-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13077087U JPS6435760U (en) | 1987-08-27 | 1987-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6435760U true JPS6435760U (en) | 1989-03-03 |
Family
ID=31386234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13077087U Pending JPS6435760U (en) | 1987-08-27 | 1987-08-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6435760U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652800U (en) * | 1992-12-03 | 1994-07-19 | 株式会社白興商会 | Clothes hanger |
| JPH078700A (en) * | 1993-06-23 | 1995-01-13 | Yamamoto Seisakusho:Kk | Clothes drying-finishing method |
| JPH073600U (en) * | 1993-06-23 | 1995-01-20 | 株式会社山本製作所 | Clothes drying finishing device |
-
1987
- 1987-08-27 JP JP13077087U patent/JPS6435760U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652800U (en) * | 1992-12-03 | 1994-07-19 | 株式会社白興商会 | Clothes hanger |
| JPH078700A (en) * | 1993-06-23 | 1995-01-13 | Yamamoto Seisakusho:Kk | Clothes drying-finishing method |
| JPH073600U (en) * | 1993-06-23 | 1995-01-20 | 株式会社山本製作所 | Clothes drying finishing device |
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