JPS62186419U - - Google Patents
Info
- Publication number
- JPS62186419U JPS62186419U JP1986075516U JP7551686U JPS62186419U JP S62186419 U JPS62186419 U JP S62186419U JP 1986075516 U JP1986075516 U JP 1986075516U JP 7551686 U JP7551686 U JP 7551686U JP S62186419 U JPS62186419 U JP S62186419U
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- insulating
- insulating film
- integrated circuit
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第１図は、本考案実施例のＭＩＭ構造のキヤパ
シタの断面図、第２図、第３図は、従来のＭＩＭ
構造のキヤパシタの断面図である。
１……基板、１３……第１の金属膜、１４……
第１の絶縁膜、１５……第２の金属膜、２０……
第２の絶縁膜。
FIG. 1 is a sectional view of a capacitor with an MIM structure according to an embodiment of the present invention, and FIGS.
FIG. 3 is a cross-sectional view of a capacitor of the structure. 1... Substrate, 13... First metal film, 14...
First insulating film, 15... Second metal film, 20...
Second insulating film.
Claims (1)
１の金属膜、第１の絶縁膜及び第２の金属膜を順
に被着形成してなるＭＩＭ構造のマイクロ波集積
回路用キヤパシタにおいて、前記キヤパシタの一
部で前記第１の絶縁膜の一部に、該絶縁膜が存在
しない部位を設け、この部位に有機絶縁材料から
成り第１の絶縁膜より厚い第２の絶縁膜を設け、
この部位の第２の金属膜をボンデイングワイヤと
の接続位置としたことを特徴とするマイクロ波集
積回路用キヤパシタ。 ２ 前記有機絶縁材料はポリイミド樹脂であるこ
とを特徴とする実用新案登録請求の範囲第１項に
記載のマイクロ波集積回路用キヤパシタ。[Claims for Utility Model Registration] 1. A micro micro-instrument with an MIM structure in which a first metal film, a first insulating film, and a second metal film are sequentially deposited on a dielectric or semi-insulating semiconductor substrate. In a capacitor for a wave integrated circuit, a part of the first insulating film of the capacitor is provided with a part where the insulating film does not exist, and a first insulating film made of an organic insulating material and thicker than the first insulating film is provided in this part. 2 insulating films are provided,
A capacitor for a microwave integrated circuit, characterized in that the second metal film in this part is a connection position with a bonding wire. 2. The capacitor for a microwave integrated circuit according to claim 1, wherein the organic insulating material is a polyimide resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986075516U JPS62186419U (en) | 1986-05-20 | 1986-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986075516U JPS62186419U (en) | 1986-05-20 | 1986-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62186419U true JPS62186419U (en) | 1987-11-27 |
Family
ID=30921730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986075516U Pending JPS62186419U (en) | 1986-05-20 | 1986-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62186419U (en) |
-
1986
- 1986-05-20 JP JP1986075516U patent/JPS62186419U/ja active Pending