JPS6440505U - - Google Patents

Info

Publication number
JPS6440505U
JPS6440505U JP13469587U JP13469587U JPS6440505U JP S6440505 U JPS6440505 U JP S6440505U JP 13469587 U JP13469587 U JP 13469587U JP 13469587 U JP13469587 U JP 13469587U JP S6440505 U JPS6440505 U JP S6440505U
Authority
JP
Japan
Prior art keywords
abrasive grain
substrate layer
grain density
cutting
dicing blade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13469587U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13469587U priority Critical patent/JPS6440505U/ja
Publication of JPS6440505U publication Critical patent/JPS6440505U/ja
Pending legal-status Critical Current

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  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の平面図、第2図は
その断面図である。第3図は、本考案の他の実施
例の平面図、第4図はその断面図である。第5図
は、従来のブレードの平面図、第6図はその断面
図である。 1……基板層、2a,2b……切刃層、3……
単層の切刃層。
FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2 is a sectional view thereof. FIG. 3 is a plan view of another embodiment of the present invention, and FIG. 4 is a sectional view thereof. FIG. 5 is a plan view of a conventional blade, and FIG. 6 is a sectional view thereof. 1... Substrate layer, 2a, 2b... Cutting edge layer, 3...
Single layer cutting edge layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体ウエハを切断・分割するダイシングブレ
ードにおいて、砥粒密度が低く金属バインダ量の
多い基板層と、基板層の両主面に各々配置した砥
粒密度の高い切刃層から構成したことを特徴とす
る半導体ウエハダイシングブレード。
A dicing blade for cutting and dividing semiconductor wafers is characterized by consisting of a substrate layer with a low abrasive grain density and a large amount of metal binder, and a cutting blade layer with a high abrasive grain density arranged on both main surfaces of the substrate layer. Semiconductor wafer dicing blade.
JP13469587U 1987-09-02 1987-09-02 Pending JPS6440505U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13469587U JPS6440505U (en) 1987-09-02 1987-09-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13469587U JPS6440505U (en) 1987-09-02 1987-09-02

Publications (1)

Publication Number Publication Date
JPS6440505U true JPS6440505U (en) 1989-03-10

Family

ID=31393681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13469587U Pending JPS6440505U (en) 1987-09-02 1987-09-02

Country Status (1)

Country Link
JP (1) JPS6440505U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01180220U (en) * 1988-06-08 1989-12-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01180220U (en) * 1988-06-08 1989-12-25
JPH0332344Y2 (en) * 1988-06-08 1991-07-09

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