JPS6361152U - - Google Patents
Info
- Publication number
- JPS6361152U JPS6361152U JP15625686U JP15625686U JPS6361152U JP S6361152 U JPS6361152 U JP S6361152U JP 15625686 U JP15625686 U JP 15625686U JP 15625686 U JP15625686 U JP 15625686U JP S6361152 U JPS6361152 U JP S6361152U
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- protection circuit
- conductivity type
- diffusion
- input protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案による入力保護回路を説明する
上面図、第２図は第１図の−線断面図、第３
図は本考案の動作を説明するための特性図、第４
図は従来の入力保護回路を説明する上面図、第５
図は従来の入力保護回路の等価回路図である。
１は入力パツド、２は拡散抵抗、３は半導体基
板、４は拡散領域、５はイオン注入領域である。
Fig. 1 is a top view illustrating the input protection circuit according to the present invention, Fig. 2 is a sectional view taken along the - line in Fig. 1, and Fig. 3 is a sectional view taken along the line -
The figure is a characteristic diagram for explaining the operation of the present invention.
The figure is a top view explaining a conventional input protection circuit.
The figure is an equivalent circuit diagram of a conventional input protection circuit. 1 is an input pad, 2 is a diffusion resistor, 3 is a semiconductor substrate, 4 is a diffusion region, and 5 is an ion implantation region.
Claims (1)
ＩＳトランジスタのゲート電極に接続される入力
保護回路において、前記拡散抵抗を形成する一導
電型の拡散領域に逆導電型のイオン注入領域を前
記拡散領域より深く形成し、前記拡散領域の接合
耐圧を低下させることを特徴とする入力保護回路
。 M protected from the input pad via a diffused resistor
In an input protection circuit connected to a gate electrode of an IS transistor, an ion implantation region of an opposite conductivity type is formed deeper than the diffusion region in the diffusion region of one conductivity type forming the diffusion resistor, and the junction breakdown voltage of the diffusion region is increased. An input protection circuit characterized by lowering the voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15625686U JPS6361152U (en) | 1986-10-13 | 1986-10-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15625686U JPS6361152U (en) | 1986-10-13 | 1986-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6361152U true JPS6361152U (en) | 1988-04-22 |
Family
ID=31077699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15625686U Pending JPS6361152U (en) | 1986-10-13 | 1986-10-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6361152U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54127684A (en) * | 1978-03-27 | 1979-10-03 | Nec Corp | Semiconductor device |
-
1986
- 1986-10-13 JP JP15625686U patent/JPS6361152U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54127684A (en) * | 1978-03-27 | 1979-10-03 | Nec Corp | Semiconductor device |
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