JPS61123549U - - Google Patents
Info
- Publication number
- JPS61123549U JPS61123549U JP627185U JP627185U JPS61123549U JP S61123549 U JPS61123549 U JP S61123549U JP 627185 U JP627185 U JP 627185U JP 627185 U JP627185 U JP 627185U JP S61123549 U JPS61123549 U JP S61123549U
- Authority
- JP
- Japan
- Prior art keywords
- impurity diffusion
- conductivity type
- diffusion region
- circuit section
- concentration impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図は第１実施例を示すパンチスルーブレイ
クダウンによる保護ダイオードの構造を示す概略
断面図であり、第２図は保護ダイオードの接続を
示す等価回路図であり、第３図は降伏電圧の変化
を示す特性図であり、第４図はリーチスルーブレ
イクダウンによる保護ダイオードの構造を示す概
略断面図である。
１……保護ダイオード、２……絶縁基板、３…
…高濃度不純物拡散領域（Ｐ＋領域）、４……高
濃度不純物拡散領域（Ｐ＋領域）、５……低濃度
不純部拡散領域（Ｎ領域）、６……絶縁膜、７…
…電極。
FIG. 1 is a schematic cross-sectional view showing the structure of a protection diode using punch-through breakdown according to the first embodiment, FIG. 2 is an equivalent circuit diagram showing the connection of the protection diode, and FIG. 3 is a diagram showing the breakdown voltage. FIG. 4 is a characteristic diagram showing changes, and FIG. 4 is a schematic cross-sectional view showing the structure of a protection diode due to reach-through breakdown. 1...Protection diode, 2...Insulating substrate, 3...
... High concentration impurity diffusion region (P + region), 4 ... High concentration impurity diffusion region (P + region), 5 ... Low concentration impurity diffusion region (N region), 6 ... Insulating film, 7 ...
…electrode.
Claims (1)
内に回路部を形成してなる半導体装置において、
上記回路部の入力端子に接続する保護ダイオード
を有し該保護ダイオードは、 上記絶縁基板上に配設され上記回路部の入力端
子と接続する第１導電型の高濃度不純部拡散領域
と、 上記絶縁基板上に配設され上記回路部のアース
と接続する第１導電型または反対導電型の高濃度
不純物拡散領域と、 上記２つの不純物拡散領域の間に配設された反
対導電型の低濃度不純物拡散領域と、 該反対導電型の低濃度不純物拡散領域の上部領
域に絶縁膜を介して配設される一定電位に保たれ
る電極、 からなる保護ダイオードであることを特徴とする
半導体装置。[Claims for Utility Model Registration] A semiconductor device comprising a semiconductor layer deposited on an insulating substrate and a circuit section formed within the semiconductor layer,
a protection diode connected to the input terminal of the circuit section, the protection diode comprising: a first conductivity type high concentration impurity diffusion region disposed on the insulating substrate and connected to the input terminal of the circuit section; a high concentration impurity diffusion region of a first conductivity type or an opposite conductivity type disposed on the insulating substrate and connected to the ground of the circuit section; and a low concentration impurity diffusion region of the opposite conductivity type disposed between the two impurity diffusion regions. 1. A semiconductor device comprising: an impurity diffusion region; and an electrode maintained at a constant potential, which is disposed in an upper region of the low concentration impurity diffusion region of an opposite conductivity type via an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP627185U JPS61123549U (en) | 1985-01-22 | 1985-01-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP627185U JPS61123549U (en) | 1985-01-22 | 1985-01-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61123549U true JPS61123549U (en) | 1986-08-04 |
Family
ID=30483559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP627185U Pending JPS61123549U (en) | 1985-01-22 | 1985-01-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61123549U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5243382A (en) * | 1975-10-02 | 1977-04-05 | Matsushita Electronics Corp | Mos type diode |
| JPS58111369A (en) * | 1981-12-24 | 1983-07-02 | Nippon Denso Co Ltd | Semiconductor device |
-
1985
- 1985-01-22 JP JP627185U patent/JPS61123549U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5243382A (en) * | 1975-10-02 | 1977-04-05 | Matsushita Electronics Corp | Mos type diode |
| JPS58111369A (en) * | 1981-12-24 | 1983-07-02 | Nippon Denso Co Ltd | Semiconductor device |
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