JPS63164252U - - Google Patents

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Publication number
JPS63164252U
JPS63164252U JP2970687U JP2970687U JPS63164252U JP S63164252 U JPS63164252 U JP S63164252U JP 2970687 U JP2970687 U JP 2970687U JP 2970687 U JP2970687 U JP 2970687U JP S63164252 U JPS63164252 U JP S63164252U
Authority
JP
Japan
Prior art keywords
region
base
emitter
power semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2970687U
Other languages
Japanese (ja)
Other versions
JP2524553Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987029706U priority Critical patent/JP2524553Y2/en
Publication of JPS63164252U publication Critical patent/JPS63164252U/ja
Application granted granted Critical
Publication of JP2524553Y2 publication Critical patent/JP2524553Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例による電力用半導体
素子を説明するための図、第２図は従来のベース
・バランス抵抗を有する電力用半導体素子を示す
図、第３図は従来の電力用トランジスタを説明す
るための図、第４図はベース不純物分布を説明す
るための図である。 ３……ベース領域、４……エミツタ領域、５…
…ベース接続部、５ａ……ベース電極、６……エ
ミツタ接続部、６ａ……エミツタ電極、７……コ
レクタ高比抵抗領域、８……コレクタ低比抵抗領
域、９……コレクタ電極、１０……絶縁膜、１２
……拡散領域、１３……高比抵抗ベース領域、１
４……半導体絶縁膜。なお図中同一符号は同一又
は相当部分を示す。 FIG. 1 is a diagram for explaining a power semiconductor device according to an embodiment of the present invention, FIG. 2 is a diagram showing a power semiconductor device having a conventional base balance resistor, and FIG. 3 is a diagram illustrating a conventional power semiconductor device. FIG. 4 is a diagram for explaining the transistor, and FIG. 4 is a diagram for explaining the base impurity distribution. 3... Base area, 4... Emitter area, 5...
...Base connection part, 5a...Base electrode, 6...Emitter connection part, 6a...Emitter electrode, 7...Collector high resistivity region, 8...Collector low resistivity region, 9...Collector electrode, 10... ...Insulating film, 12
... Diffusion region, 13 ... High resistivity base region, 1
4...Semiconductor insulating film. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】 (1) その一方の端面から他方の端面に主電流が
流れる縦型の電力用半導体素子において、 半導体領域上に形成され、荷電体の注入を引き
起こすエミツタ及びベース領域と、 それぞれ該両領域に接続された櫛状のエミツタ
及びベース電極と、 上記ベース領域のベース電極との接続部とエミ
ツタ領域との間に該接続部を取り囲むように形成
され、ベース領域と同じ導電型でかつ不純物濃度
が該ベース領域より低い低濃度領域とを備えたこ
とを特徴とする電力用半導体素子。 (2) 上記ベース領域は半導体絶縁膜をマスクと
して選択的に拡散して形成されたものであり、 上記低濃度領域は半導体領域上に選択的に狭い
幅の半導体絶縁膜を形成した後、この絶縁膜下の
半導体領域に、隣接領域からの横方向への拡散に
よつて形成されたものであることを特徴とする実
用新案登録請求の範囲第１項記載の電力用半導体
素子。 (3) 上記低濃度領域はエミツタ領域に接して配
置したものであることを特徴とする実用新案登録
請求の範囲第１項または第２項記載の電力用半導
体素子。[Claims for Utility Model Registration] (1) In a vertical power semiconductor device in which a main current flows from one end face to the other end face, an emitter and a base region formed on a semiconductor region and causing injection of charged bodies. and a comb-shaped emitter and a base electrode connected to both regions, respectively, and a comb-shaped emitter and a base electrode formed between the base region and the base electrode and the emitter region so as to surround the connection portion, and the same as the base region. A power semiconductor element comprising a conductive type low concentration region having an impurity concentration lower than that of the base region. (2) The above base region is formed by selective diffusion using a semiconductor insulating film as a mask, and the above low concentration region is formed by selectively forming a narrow semiconductor insulating film on the semiconductor region. The power semiconductor device according to claim 1, wherein the power semiconductor device is formed in a semiconductor region under an insulating film by lateral diffusion from an adjacent region. (3) The power semiconductor device according to claim 1 or 2, wherein the low concentration region is arranged in contact with an emitter region.
JP1987029706U 1987-02-27 1987-02-27 Power semiconductor device Expired - Lifetime JP2524553Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987029706U JP2524553Y2 (en) 1987-02-27 1987-02-27 Power semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987029706U JP2524553Y2 (en) 1987-02-27 1987-02-27 Power semiconductor device

Publications (2)

Publication Number Publication Date
JPS63164252U true JPS63164252U (en) 1988-10-26
JP2524553Y2 JP2524553Y2 (en) 1997-02-05

Family

ID=30833833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987029706U Expired - Lifetime JP2524553Y2 (en) 1987-02-27 1987-02-27 Power semiconductor device

Country Status (1)

Country Link
JP (1) JP2524553Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000067330A1 (en) * 1999-04-30 2000-11-09 Rohm Co., Ltd. Semiconductor device having bipolar transistors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165672A (en) * 1979-06-11 1980-12-24 Fujitsu Ltd Semiconductor device
JPS58116243U (en) * 1982-02-03 1983-08-08 三洋電機株式会社 transistor structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165672A (en) * 1979-06-11 1980-12-24 Fujitsu Ltd Semiconductor device
JPS58116243U (en) * 1982-02-03 1983-08-08 三洋電機株式会社 transistor structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000067330A1 (en) * 1999-04-30 2000-11-09 Rohm Co., Ltd. Semiconductor device having bipolar transistors

Also Published As

Publication number Publication date
JP2524553Y2 (en) 1997-02-05

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