JPH0448643U - - Google Patents
Info
- Publication number
- JPH0448643U JPH0448643U JP9175390U JP9175390U JPH0448643U JP H0448643 U JPH0448643 U JP H0448643U JP 9175390 U JP9175390 U JP 9175390U JP 9175390 U JP9175390 U JP 9175390U JP H0448643 U JPH0448643 U JP H0448643U
- Authority
- JP
- Japan
- Prior art keywords
- region
- base region
- conductivity type
- cathode
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 3
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
Description
第１図と第２図は本考案に係るＭＯＳゲートサ
イリスタの各実施例を示す各側断面図で、第３図
はその等価回路図、第４図は従来のＩＧＢＴの側
断面図である。
８……半導体基板、９……アノード領域、１０
……第２ベース領域、１１……カソード領域、Ｇ
……ゲート電極、Ｒ……高抵抗層。
1 and 2 are side sectional views showing respective embodiments of a MOS gate thyristor according to the present invention, FIG. 3 is an equivalent circuit diagram thereof, and FIG. 4 is a side sectional view of a conventional IGBT. 8... Semiconductor substrate, 9... Anode region, 10
...Second base region, 11...Cathode region, G
...Gate electrode, R...High resistance layer.
Claims (1)
板の裏面側より高濃度他導電型不純物を拡散して
形成したアノード領域と、 上記半導体基板の表面側より低濃度他導電型不
純物と高濃度一導電型不純物とを順次、選択拡散
して形成した第２ベース領域及びカソード領域と
、 基板表面に露出した第２ベース領域の一部を含
む基板上に絶縁膜を介して形成したゲート電極と
、 上記第２ベース領域内でその末端のカソード電
極取出し部から所定寸法延在した領域内に形成さ
れ、上記カソード領域へ注入電流が流れるように
バイアス電圧を生じさせる高抵抗層とを具備した
ことを特徴とするサイリスタ。[Claims for Utility Model Registration] An anode region formed by diffusing a highly concentrated impurity of another conductivity type from the back side of a low concentration semiconductor substrate of one conductivity type serving as a first base region; An insulating film is formed on a substrate including a second base region and a cathode region formed by sequentially selectively diffusing impurities of other conductivity type and high concentration impurity of one conductivity type, and a part of the second base region exposed on the substrate surface. A gate electrode is formed through the second base region, and a high voltage is formed in a region extending a predetermined dimension from the cathode electrode lead-out portion at the end of the second base region, and generates a bias voltage so that an injection current flows into the cathode region. A thyristor characterized by comprising a resistance layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9175390U JPH0448643U (en) | 1990-08-31 | 1990-08-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9175390U JPH0448643U (en) | 1990-08-31 | 1990-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448643U true JPH0448643U (en) | 1992-04-24 |
Family
ID=31827660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9175390U Pending JPH0448643U (en) | 1990-08-31 | 1990-08-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448643U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58197771A (en) * | 1982-04-05 | 1983-11-17 | ゼネラル・エレクトリツク・カンパニイ | Insulated gate rectifier improved for energizing capacity |
-
1990
- 1990-08-31 JP JP9175390U patent/JPH0448643U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58197771A (en) * | 1982-04-05 | 1983-11-17 | ゼネラル・エレクトリツク・カンパニイ | Insulated gate rectifier improved for energizing capacity |
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