JPS6350063A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6350063A JPS6350063A JP19448186A JP19448186A JPS6350063A JP S6350063 A JPS6350063 A JP S6350063A JP 19448186 A JP19448186 A JP 19448186A JP 19448186 A JP19448186 A JP 19448186A JP S6350063 A JPS6350063 A JP S6350063A
- Authority
- JP
- Japan
- Prior art keywords
- region
- collector
- base
- diode
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000005468 ion implantation Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、コレクタ領域とベース領域間にダイオードを
持つトランジスタに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a transistor having a diode between a collector region and a base region.
従来の技術
第２図はコレクタ・ベース間に逆方向ダイオード内蔵の
ＮＰＮトランジスタの等価回路図である。第３図はコレ
クタ領域とベース領域との間にダイオードを形成した従
来のトランジスタの断面図の一例である。図中、１はコ
レクタ領域、３はベース領域、４はエミッタ領域、５は
コレクタ電極、６はベース電極、７はエミッタ電極、８
は絶縁膜、９は高濃度コレクタ領域、１０はダイオード
領域である。第３図示の構成では、ダイオードは、ダイ
オード領域１０の間隔と高濃度コレクタ領域９の濃度と
によって、その特性が決定される。また、第４図には、
コレクタ領域の表面に高濃度イオン注入領域１１を形成
して、同領域とベース領域３との間にダイオードを形成
した従来のトランジスタの断面図の一例である。第４図
に示す構造では、イオン注入法でコレクタ領域と同一導
電型で濃度が濃い領域を形成し、この濃度によりダイオ
ード特性を決定するものである。Prior Art FIG. 2 is an equivalent circuit diagram of an NPN transistor with a built-in reverse diode between its collector and base. FIG. 3 is an example of a cross-sectional view of a conventional transistor in which a diode is formed between a collector region and a base region. In the figure, 1 is a collector region, 3 is a base region, 4 is an emitter region, 5 is a collector electrode, 6 is a base electrode, 7 is an emitter electrode, 8
9 is an insulating film, 9 is a high concentration collector region, and 10 is a diode region. In the configuration shown in FIG. 3, the characteristics of the diode are determined by the spacing between the diode regions 10 and the concentration of the high concentration collector region 9. Also, in Figure 4,
1 is an example of a cross-sectional view of a conventional transistor in which a high concentration ion implantation region 11 is formed on the surface of a collector region and a diode is formed between the region and a base region 3. In the structure shown in FIG. 4, a highly concentrated region of the same conductivity type as the collector region is formed by ion implantation, and the diode characteristics are determined by this concentration.
発明が解決しようとする問題点
第３図示の従来例では、形成されたダイオードは、高耐
圧化ゐく可能であるが、ベース領域およびエミッタ領域
の拡散工程およびマスク寸法精度の影響により、ダイオ
ード領域の間隔が変化し、このため、耐圧の絶対値が変
動する問題があった。Problems to be Solved by the Invention In the conventional example shown in Figure 3, the formed diode can have a high breakdown voltage, but due to the diffusion process of the base region and emitter region and the influence of mask dimensional accuracy, the diode region There was a problem in that the interval between the two changes, and as a result, the absolute value of the withstand voltage fluctuated.
また第４図示の従来例では、イオン注入法で形成した領
域の濃度を下げると、耐圧にばらつきが生じ、したがっ
て、低耐圧のダイオードしか形成できなかった。Further, in the conventional example shown in FIG. 4, when the concentration of the region formed by ion implantation is lowered, variations in breakdown voltage occur, and therefore only a diode with a low breakdown voltage can be formed.
本発明の目的は、従来の問題点を解消して、かつダイオ
ードの電流容量を増大させる半導体装置に関するもので
ある。An object of the present invention is to solve the problems of the conventional semiconductor device and to increase the current capacity of a diode.
問題点を解決するための手段
本発明の半導体装置は、半導体基板の導電型のコレクタ
領域上に、同コレクタ領域と同一導電型で高濃度のエピ
タキシャル領域を有し、前記コレクタ領域と反対導電型
のベース領域を前記エピタキシャル領域を貫通するよう
に形成し、前記ベース領域内に、コレクタ領域と同一導
電型のエミッタ領域を形成したものである。Means for Solving the Problems The semiconductor device of the present invention has a highly doped epitaxial region of the same conductivity type as the collector region on a collector region of the conductivity type of the semiconductor substrate; A base region is formed to penetrate the epitaxial region, and an emitter region having the same conductivity type as the collector region is formed within the base region.
作用
上記構成により、ベース領域とエピタキシャル領域との
間にダイオードが形成される。エピタキシャル領域の不
純物濃度を選定することにより、簡単にダイオード特性
が制御でき、また、エピタキシャル領域は広範囲に均一
なジャンクションができるために、電流容量も増大する
。Effect: With the above structure, a diode is formed between the base region and the epitaxial region. By selecting the impurity concentration of the epitaxial region, the diode characteristics can be easily controlled, and since uniform junctions can be formed over a wide range in the epitaxial region, the current capacity can also be increased.
実施例 本発明の一実施例を第１図に基づいて説明する。Example An embodiment of the present invention will be described based on FIG.
第１図は、本発明の半導体装置の断面図である。同図に
おいて、基板のコレクタ領域１上にエピタキシャル領域
２を形成し、その中にベース領域３をエピタキシャル領
域２を貫通するように形成し、ベース領域３内に、エミ
ッタ領域４と形成する。コレクタ領域１にコレクタ電極
５を形成し、ベース領域３、エミッタ領域４にも、それ
ぞれ、ベース電極６、エミッタ電極７を形成する。FIG. 1 is a sectional view of a semiconductor device of the present invention. In the figure, an epitaxial region 2 is formed on a collector region 1 of a substrate, a base region 3 is formed therein so as to pass through the epitaxial region 2, and an emitter region 4 is formed within the base region 3. A collector electrode 5 is formed in the collector region 1, and a base electrode 6 and an emitter electrode 7 are also formed in the base region 3 and emitter region 4, respectively.
８は絶縁膜である。8 is an insulating film.
このようにして、形成されたトランジスタのコレクタ領
域とベース領域間のダイオードはエピタキシャル領域の
不純物濃度によりその特性が制御できる。In this way, the characteristics of the diode between the collector region and the base region of the formed transistor can be controlled by the impurity concentration of the epitaxial region.
以上に述べたように、本実施例によれば、ダイオード形
成のために、エピタキシャル領域の形成は必要であるが
、そのダイオード特性はエピタキシャル領域の不純物濃
度により容易に決定される。また、流れる電流も、エピ
タキシャル領域の不純物濃度がほぼ一定であるため、ベ
ース領域とのジャンクション全体で電流が流れ、ダイオ
ードの電流容量が増大する。As described above, according to this embodiment, it is necessary to form an epitaxial region to form a diode, but the diode characteristics are easily determined by the impurity concentration of the epitaxial region. Furthermore, since the impurity concentration in the epitaxial region is approximately constant, current flows throughout the junction with the base region, increasing the current capacity of the diode.
発明の効果
本発明によれば、コレクタ領域上に形成された同導電型
エピタキシャル領域の不純物濃度を制御することにより
、ダイオードの特性を容易にコントロールでき、簡単に
コレクタベース間にダイオードを形成したトランジスタ
が実現でき、その実用的効果は大である。Effects of the Invention According to the present invention, the characteristics of the diode can be easily controlled by controlling the impurity concentration of the epitaxial region of the same conductivity type formed on the collector region, and a transistor in which a diode is easily formed between the collector and the base can be obtained. can be realized, and its practical effects are great.
第１図は本発明の一実施例による半導体装置の断面図、
第２図はダイオード内□蔵のＮＰＮトランジスタの等価
回路図、第３図、第４図は従来の半導体装置の各断面図
である。
１・・・・・・コレクタ領域、２・・・・・・エピタキ
シャル領域、３・・・・・・ベース領域、４・・・・・
・エミッタ領域、５・・・・・・コレクタ電極、６・・
・・・・ベース電極、７・・・・・・エミッタ電極、８
・・・・・・絶縁膜、９，１０・・・・・・ダイオード
領域、１１・・・・・・高濃度イオン注入領域。
代理人の氏名 弁理士 中尾敏男 ほか１名−６＝
第１図
第２図
第３図
第４図
、 ６４ ７ ８
７．５FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention;
FIG. 2 is an equivalent circuit diagram of an NPN transistor with a built-in diode, and FIGS. 3 and 4 are cross-sectional views of conventional semiconductor devices. 1... Collector region, 2... Epitaxial region, 3... Base region, 4...
・Emitter region, 5... Collector electrode, 6...
...Base electrode, 7...Emitter electrode, 8
...Insulating film, 9,10...Diode region, 11...High concentration ion implantation region. Name of agent Patent attorney Toshio Nakao and 1 other person - 6 = Figure 1 Figure 2 Figure 3 Figure 4, 64 7 8 7.5
Claims (1)
一導電型高濃度で形成し、前記コレクタ領域と反対導電
型のベース領域を前記エピタキシャル領域を貫通して形
成し、同ベース領域内に、前記コレクタ領域と同一導電
型のエミッタ領域を形成して、コレクタ・ベース間にダ
イオードを内蔵形成したことを特徴とする半導体装置。An epitaxial region of the same conductivity type is formed with high concentration on the collector region of the semiconductor substrate, a base region of the opposite conductivity type to the collector region is formed passing through the epitaxial region, and the base region and the collector region are formed in the base region. A semiconductor device characterized in that emitter regions of the same conductivity type are formed and a diode is built in between a collector and a base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19448186A JPH0766923B2 (en) | 1986-08-19 | 1986-08-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19448186A JPH0766923B2 (en) | 1986-08-19 | 1986-08-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6350063A true JPS6350063A (en) | 1988-03-02 |
| JPH0766923B2 JPH0766923B2 (en) | 1995-07-19 |
Family
ID=16325255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19448186A Expired - Lifetime JPH0766923B2 (en) | 1986-08-19 | 1986-08-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766923B2 (en) |
-
1986
- 1986-08-19 JP JP19448186A patent/JPH0766923B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0766923B2 (en) | 1995-07-19 |
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