JPS6133648Y2 - - Google Patents
Info
- Publication number
- JPS6133648Y2 JPS6133648Y2 JP1978058483U JP5848378U JPS6133648Y2 JP S6133648 Y2 JPS6133648 Y2 JP S6133648Y2 JP 1978058483 U JP1978058483 U JP 1978058483U JP 5848378 U JP5848378 U JP 5848378U JP S6133648 Y2 JPS6133648 Y2 JP S6133648Y2
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- emitter region
- active
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
【考案の詳細な説明】 本考案はトランジスタの改良に関する。[Detailed explanation of the idea] The present invention relates to improvements in transistors.
従来トランジスタでは電流容量および高周波特
性を向上させるためにエミツタ領域の周辺長を長
くすれば良いことが知られている。この方法とし
て網目状ベース法あるいは網目状エミツタ法があ
る。しかしこの方法ではベース領域上又はエミツ
タ領域上の絶縁膜にエミツタ電極又はベース電極
を設けるために絶縁膜のピンホール等により耐圧
不良が多い欠点があつた。他の方法としては第１
図に示す如くベース領域１とエミツタ領域２をフ
インガー状に屈曲させてエミツタ領域２の周辺長
の増加をはかるものである。斯上の方法では前述
した方法ほどエミツタ領域の周辺長の増加は望め
ないが、ベース領域１およびエミツタ領域２上に
夫々ベース電極およびエミツタ電極が形成される
ので耐圧不良はなくなる利点を有している。 It is known that in order to improve the current capacity and high frequency characteristics of conventional transistors, it is sufficient to increase the peripheral length of the emitter region. This method includes a mesh base method and a mesh emitter method. However, this method has the disadvantage that the emitter electrode or the base electrode is provided on the insulating film on the base region or the emitter region, so that pinholes or the like in the insulating film often cause breakdown voltage failures. Another method is the first
As shown in the figure, the peripheral length of the emitter region 2 is increased by bending the base region 1 and the emitter region 2 into a finger shape. Although the above method cannot expect to increase the peripheral length of the emitter region as much as the above-mentioned method, it has the advantage of eliminating breakdown voltage defects because the base electrode and the emitter electrode are formed on the base region 1 and the emitter region 2, respectively. There is.
本考案は後者の方法のトランジスタの改良に係
り、更にエミツタ周辺長の増大を目的としてい
る。以下第２図および第３図を参照して本考案の
一実施例を詳述する。 The present invention relates to an improvement of the transistor using the latter method, and further aims at increasing the emitter peripheral length. An embodiment of the present invention will be described in detail below with reference to FIGS. 2 and 3.
第２図に本考案の上面図を示し、第３図に第２
図の−線断面図を示す。 Figure 2 shows a top view of the present invention, and Figure 3 shows the second
A sectional view taken along the - line in the figure is shown.
第２図及び第３図に於いて、１１はＮ型のコレ
クタ領域、１２はＰ型のベース領域、１３はＮ型
の多数個の島状活性エミツタ領域、１４はＮ型の
接続エミツタ領域である。 In FIGS. 2 and 3, 11 is an N-type collector region, 12 is a P-type base region, 13 is an N-type multi-island active emitter region, and 14 is an N-type connected emitter region. be.
本考案の特徴はエミツタ領域の形状にあり、エ
ミツタ領域は活性エミツタ領域１３と接続エミツ
タ領域１４とで構成されており、活性エミツタ領
域１３は上述した様に多数個の互いに離間した島
領域１３１…１３１をベース領域１２に近接して
フインガー状に屈曲して配列し、接続エミツタ領
域１４は活性エミツタ領域１３にその一部を重畳
して形成され且つ活性エミツタ領域１３と連結し
ている。また第３図に示す如く活性エミツタ領域
１３はベース領域１２内に深く拡散されトランジ
スタの実質的なエミツタとして動作し、接続エミ
ツタ領域１４はベース領域１２内に活性エミツタ
領域１３より浅く拡散されて活性エミツタ領域１
３の電気的な接続とエミツタ電極のコンタクト領
域として働く。 The feature of the present invention lies in the shape of the emitter region, and the emitter region is composed of an active emitter region 13 and a connecting emitter region 14, and the active emitter region 13 has a large number of island regions 131 spaced apart from each other as described above. 131 are bent in a finger shape and arranged close to the base region 12, and the connecting emitter region 14 is formed partially overlapping the active emitter region 13 and is connected to the active emitter region 13. Further, as shown in FIG. 3, the active emitter region 13 is diffused deeply into the base region 12 and operates as a substantial emitter of the transistor, and the connecting emitter region 14 is diffused into the base region 12 shallower than the active emitter region 13 and becomes active. Emitsuta area 1
3 serves as an electrical connection and a contact area for the emitter electrode.
斯上の構造では実質的に働くエミツタが活性エ
ミツタ領域１３で構成されるため、ベース領域１
２に対向する活性エミツタ領域１３の周辺長は第
１図のエミツタ構造の周辺長より30〜60％以上も
大きく取れるのである。またエミツタ電極は前述
の如く接続エミツタ領域１４上に形成されるため
絶縁膜の不良に依る耐圧不良は全く無い構造であ
る。 In the above structure, the active emitter region 13 constitutes the active emitter, so the base region 1
The peripheral length of the active emitter region 13 facing the active emitter region 2 can be greater than the peripheral length of the emitter structure shown in FIG. 1 by 30 to 60% or more. Further, since the emitter electrode is formed on the connecting emitter region 14 as described above, the structure is free from breakdown voltage defects due to defects in the insulating film.
以上に詳述した如く本考案に依れば活性エミツ
タ領域によりエミツタの周辺長を増加でき、電流
容量および高周波特性を大巾に改善できる。 As detailed above, according to the present invention, the peripheral length of the emitter can be increased by the active emitter region, and the current capacity and high frequency characteristics can be greatly improved.
第１図は従来例を説明するための上面図、第２
図は本考案を説明する上面図、第３図は第２図の
−線断面図である。
１１はコレクタ領域、１２はベース領域、１３
は活性エミツタ領域、１４は接続エミツタ領域で
ある。
Figure 1 is a top view for explaining the conventional example, Figure 2 is a top view for explaining the conventional example;
The figure is a top view for explaining the present invention, and FIG. 3 is a sectional view taken along the line -- in FIG. 11 is a collector area, 12 is a base area, 13
is an active emitter region, and 14 is a connected emitter region.
Claims (1)
域と一導電型でフインガー部分を有するエミツタ
領域を具備したトランジスタに於いて、前記エミ
ツタ領域のフインガー部分に前記ベース領域に近
接し複数個の互いに離間したフインガー状に屈曲
して配列された島状の活性エミツタ領域を設け、
該活性領域の前記ベース領域と対向する反対側の
一部と前記活性領域より浅く拡散された接続エミ
ツタ領域とを重畳させて連結し、前記接続エミツ
タ領域上にエミツタ電極を設けることを特徴とす
るトランジスタ。 In a transistor comprising a collector region of one conductivity type, a base region of an opposite conductivity type, and an emitter region of one conductivity type and having a finger portion, a plurality of emitter regions close to the base region and spaced apart from each other are provided in the finger portion of the emitter region. island-shaped active emitter regions arranged in a bent finger shape,
A part of the active region on the opposite side facing the base region and a connection emitter region diffused shallower than the active region are overlapped and connected, and an emitter electrode is provided on the connection emitter region. transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978058483U JPS6133648Y2 (en) | 1978-04-26 | 1978-04-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978058483U JPS6133648Y2 (en) | 1978-04-26 | 1978-04-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54158572U JPS54158572U (en) | 1979-11-05 |
| JPS6133648Y2 true JPS6133648Y2 (en) | 1986-10-01 |
Family
ID=28957347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1978058483U Expired JPS6133648Y2 (en) | 1978-04-26 | 1978-04-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6133648Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5056178A (en) * | 1973-09-14 | 1975-05-16 | ||
| JPS50103286A (en) * | 1974-01-11 | 1975-08-15 |
-
1978
- 1978-04-26 JP JP1978058483U patent/JPS6133648Y2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5056178A (en) * | 1973-09-14 | 1975-05-16 | ||
| JPS50103286A (en) * | 1974-01-11 | 1975-08-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54158572U (en) | 1979-11-05 |
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