JPH0438519Y2 - - Google Patents

Description

[Detailed Description of the Invention] (a) Field of Industrial Application The present invention relates to a transistor, and particularly to a transistor having a multi-emitter region for achieving high current capacity.

(b) Prior Art Conventionally, it has been known to increase the effective area of the emitter region as a structure for increasing the current capacity of a transistor. A well-known example of this structure is the multi-emitter structure. In this structure, by providing a large number of island-like emitter regions on the surface of the base region, the peripheral length of the base-emitter junction can be increased, and an increase in current capacity can be achieved.

Figure 1 shows a conventional multi-emitter structure. 1
is a collector region made of a semiconductor substrate, 2 is a base region, 3...3 are multi-emitter regions, 4, indicated by a dotted line, is an emitter electrode in ohmic contact with the multi-emitter regions 3...3, and 5 is a base region in ohmic contact with the base region 2. It is.

Note that such a transistor with a multi-emitter structure can have multiple layers of bonding pads using multilayer wiring technology, but in the assembly method that uses ultrasonic bonding, the insulation of the interlayer insulating film is often destroyed by ultrasonic energy. Therefore, as shown in FIG. 1, it is necessary to provide a pad region 6 on the base region 2 where a bonding pad is to be provided, and as a result, the multi-emitter region 3 must be formed except for the pad region 6, which reduces the current capacity. The effect of the increase will be greatly diminished.

(c) Purpose of the invention The present invention has been devised in view of the above drawbacks, and is intended to realize a transistor having a multi-emitter region that can greatly improve the conventional drawbacks and increase the current capacity.

(d) Structure of the invention As shown in FIG. 2, the transistor according to the invention comprises a collector region 11, a base region 12, and a number of island-shaped multi-emitter regions 13, and the multi-emitter region 13 has a pad area 16 in which a bonding pad is to be provided. Base and emitter electrodes 15 and 14 are provided at regular intervals in the base area 12 except for the pad area 12, and base and emitter electrodes 15 and 14 are provided on the pad area 16 and extend in ohmic contact with each area, and are sandwiched between the pad area 16. The emitter region 14 is configured to shift the matrix of the other emitter regions 14.

(e) Examples This embodiment is shown in FIG.

The transistor according to the present invention includes a collector region 11 made of an N-type silicon semiconductor substrate, a P-type base region 12, and a number of island-shaped N-type multi-emitter regions 13, and the multi-emitter regions 13 form bonding pads. Area to be padded 1
They are uniformly arranged on almost the entire surface of the base region 12 except for the areas 6 and 6.

The feature of the present invention lies in the pattern of the multi-emitter region 13. That is, the pattern provided between the opposing pad areas 16 and the pattern of other parts are reversed as shown in FIG. More specifically, in the past, the multi-emitter regions 13...13 were arranged completely in rows and columns at regular intervals as shown in FIG. It is located between the rows of the emitter region 13. As a result, multi-emitter area 13...13
Even if the padding area 16 is increased by one line in the padding area 16, the area of the padding area 16 does not decrease much and there is no problem with bonding.

Then, as shown by dotted lines, a base electrode 15 and an emitter electrode 14 made of vapor-deposited aluminum are formed on the oxide film on the surface of the substrate. The base electrode 15 is in ohmic contact with the base region 12 and extends to the intended pad region 16, and the emitter electrode 14
is extended to the pad area 16 in ohmic contact with each multi-emitter area 13. Further, both electrodes 14 and 15 have a well-known comb shape, and thin metal wires are ultrasonically bonded to the expanded portions on the pad area 16.

Specifically, on a 1.26mm square transistor pellet.
When a 60μ square multi-emitter region 13 is formed, the conventional 37
It was possible to increase the current capacity from 8 to 40.
It can be increased by about 10%.

(f) Effects According to the present invention, by improving the pattern of the multi-emitter region 13, the emitter peripheral length can be easily increased, and the current capacity can be increased. Furthermore, sufficient electrode pads for ultrasonic bonding can be secured.

[Brief explanation of the drawing]

FIG. 1 is a top view illustrating a conventional example, and FIG. 2 is a top view illustrating the present invention. Explanation of main figure numbers: 11 is a semiconductor substrate, 12 is a base region, 13 is an emitter region, 14 is an emitter electrode, and 15 is a base electrode.

Claims (1)

[Claims for Utility Model Registration] A semiconductor layer serving as a collector region, a base region formed within this collector region, and a lattice-shaped region provided within this base region excluding the opposing bump area. a multi-island emitter region provided so that the base region is exposed; an insulating film provided on the semiconductor layer; and an emitter region provided on the insulating film and in ohmic contact with the lattice-shaped base region. , a comb-shaped base electrode extending from above the one scheduled batting area; and a comb-shaped base electrode provided on the insulating layer and in ohmic contact with the multi-island emitter area, extending from above the other scheduled batting area. In a transistor equipped with an extended comb-shaped emitter electrode, by shifting the multi-island emitter region provided between the two bump scheduled regions between the other emitter regions, the shifting direction and A transistor characterized in that one side of the parallel butts is changed to change the butt area.