JPS57102065A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57102065A
JPS57102065A JP55178249A JP17824980A JPS57102065A JP S57102065 A JPS57102065 A JP S57102065A JP 55178249 A JP55178249 A JP 55178249A JP 17824980 A JP17824980 A JP 17824980A JP S57102065 A JPS57102065 A JP S57102065A
Authority
JP
Japan
Prior art keywords
region
section
emitter region
emitter
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55178249A
Other languages
Japanese (ja)
Other versions
JPH0313755B2 (en
Inventor
Yasuo Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55178249A priority Critical patent/JPS57102065A/en
Publication of JPS57102065A publication Critical patent/JPS57102065A/en
Publication of JPH0313755B2 publication Critical patent/JPH0313755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To uniformalize current distribution, and to improve breakdown resisting quantity by setting the shape and arrangement of emitter regions and base regions so that resistance among emitters and bases in each section of a transistor equalizes substantially. CONSTITUTION:The P type base region is formed onto an N type collector region 1, and the emitter region 5 is shaped so as to surround the first section 31a in the P type base region. In this case, the shortest distance at separate position between a PN junction formed by the second section 32 surrounding the emitter region 5 and the emitter region 5 and a PN junction shaped by the emitter region 5 and the first section 31 is uniformalized extending over the whole circumference of the emitter region 5.
JP55178249A 1980-12-16 1980-12-16 Semiconductor device Granted JPS57102065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55178249A JPS57102065A (en) 1980-12-16 1980-12-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55178249A JPS57102065A (en) 1980-12-16 1980-12-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57102065A true JPS57102065A (en) 1982-06-24
JPH0313755B2 JPH0313755B2 (en) 1991-02-25

Family

ID=16045187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55178249A Granted JPS57102065A (en) 1980-12-16 1980-12-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102065A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653224A (en) * 1992-07-30 1994-02-25 Mitsubishi Electric Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356976A (en) * 1976-11-02 1978-05-23 Matsushita Electronics Corp Darlington transistor
JPS5432272A (en) * 1977-08-17 1979-03-09 Sanken Electric Co Ltd Composite semiconductor
JPS54105977A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356976A (en) * 1976-11-02 1978-05-23 Matsushita Electronics Corp Darlington transistor
JPS5432272A (en) * 1977-08-17 1979-03-09 Sanken Electric Co Ltd Composite semiconductor
JPS54105977A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653224A (en) * 1992-07-30 1994-02-25 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0313755B2 (en) 1991-02-25

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