JPS5617065A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5617065A
JPS5617065A JP9359479A JP9359479A JPS5617065A JP S5617065 A JPS5617065 A JP S5617065A JP 9359479 A JP9359479 A JP 9359479A JP 9359479 A JP9359479 A JP 9359479A JP S5617065 A JPS5617065 A JP S5617065A
Authority
JP
Japan
Prior art keywords
region
collector
type
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9359479A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Yoshio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9359479A priority Critical patent/JPS5617065A/en
Publication of JPS5617065A publication Critical patent/JPS5617065A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To raise the current capacity of the transistor to the same level as the normal operation even in reverse operation by forming the collector and base junction of the transistor having a slender emitter region in a slender structure. CONSTITUTION:An N<->-type layer 2 is epitaxially grown on an N<+>-type Si substrate 1, is used as a collector region 3, and is coated entirely with an SiO2 film 6. Then, openings are perforated at the predetermined region of the film 6 to diffuse P-type base region 4'. At this time, in order to increase the length of the peripheral distance of the collector and the base junction, rectangular shaped regions are aligned in four, are connected at one respective ends thereof integrally. Thereafter, a region 4' is formed along the interior of the pattern of the region 4' to diffuse the N-type emitter region 5, and an N-type region 10 is diffused at the position selected not to lower the withstand voltage of the collector and the base junction along the region 4' on the surface of the region 3. Thereafter, collector, emitter, base, emitter upper collector electrodes 7-11 are coated on the regions 3, 4', 5, 10, respectively.
JP9359479A 1979-07-20 1979-07-20 Transistor Pending JPS5617065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9359479A JPS5617065A (en) 1979-07-20 1979-07-20 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9359479A JPS5617065A (en) 1979-07-20 1979-07-20 Transistor

Publications (1)

Publication Number Publication Date
JPS5617065A true JPS5617065A (en) 1981-02-18

Family

ID=14086622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9359479A Pending JPS5617065A (en) 1979-07-20 1979-07-20 Transistor

Country Status (1)

Country Link
JP (1) JPS5617065A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102176A (en) * 1983-11-07 1985-06-06 Ueno Seiyaku Kk Preparation of food of delicate flavor of cuttlefish
JPH0515346A (en) * 1991-07-12 1993-01-26 Yamanaka Shokuhin Kogyo Kk Split squid seasoned with 'miso' and its production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102176A (en) * 1983-11-07 1985-06-06 Ueno Seiyaku Kk Preparation of food of delicate flavor of cuttlefish
JPH0435145B2 (en) * 1983-11-07 1992-06-10 Ueno Seiyaku Kk
JPH0515346A (en) * 1991-07-12 1993-01-26 Yamanaka Shokuhin Kogyo Kk Split squid seasoned with 'miso' and its production

Similar Documents

Publication Publication Date Title
JPS54100273A (en) Memory circuit and variable resistance element
JPS5691478A (en) Manufacture of punch-through type diode
JPS55140260A (en) Semiconductor device
JPS5617065A (en) Transistor
JPS55153367A (en) Semiconductor device
JPS562691A (en) Hall-effect device
JPS5596675A (en) Semiconductor device
JPS55123161A (en) Darlington-connection semiconductor device
JPS564275A (en) Semiconductor device
JPS5596671A (en) Semiconductor device
JPS5613761A (en) Preparation of semiconductor device
JPS5681961A (en) Semiconductor junction capacitor
JPS5529175A (en) Planar type transistor
JPS55162263A (en) Semiconductor device
JPS5788769A (en) Semiconductor device
JPS564274A (en) Semiconductor device
JPS5617053A (en) Semiconductor device
JPS55125678A (en) Zener diode
JPS5469391A (en) Integrated composite element
JPS5617064A (en) Transistor
JPS5563879A (en) Semiconductor device
JPS56108263A (en) Manufacture of semiconductor device
JPS57198657A (en) Semiconductor device
JPS57102065A (en) Semiconductor device
JPS55103760A (en) Planar semiconductor device