JPS6350144U - - Google Patents
Info
- Publication number
- JPS6350144U JPS6350144U JP14446286U JP14446286U JPS6350144U JP S6350144 U JPS6350144 U JP S6350144U JP 14446286 U JP14446286 U JP 14446286U JP 14446286 U JP14446286 U JP 14446286U JP S6350144 U JPS6350144 U JP S6350144U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- field effect
- effect transistor
- protective field
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の半導体装置に使用される保護
用電界効果トランジスタの平面図、第２図は第１
図のＸ―Ｘ′線の断面図、第３図は第１図の等価
回路図、第４図は本考案の他の実施例である半導
体装置に使用される保護用電界効果トランジスタ
の平面図、第５図は第４図のＸ―Ｘ′線の断面図
、第６図は第４図の等価回路図、第７図は従来の
半導体装置に使用される保護ダイオードの断面図
である。
１は保護用接合型電界効果トランジスタ、２は
基板、３はＰ型の拡散領域、４はゲート拡散領域
、５はソース電極、６はドレイン電極、７はソー
スパツド、８は電極、９はゲートパツド、１０は
トランジスタ、１１はゲート電極、１２は通路で
ある。
FIG. 1 is a plan view of a protective field effect transistor used in the semiconductor device of the present invention, and FIG.
3 is an equivalent circuit diagram of FIG. 1, and FIG. 4 is a plan view of a protective field effect transistor used in a semiconductor device according to another embodiment of the present invention. , FIG. 5 is a sectional view taken along line XX' in FIG. 4, FIG. 6 is an equivalent circuit diagram of FIG. 4, and FIG. 7 is a sectional view of a protection diode used in a conventional semiconductor device. 1 is a protective junction field effect transistor, 2 is a substrate, 3 is a P-type diffusion region, 4 is a gate diffusion region, 5 is a source electrode, 6 is a drain electrode, 7 is a source pad, 8 is an electrode, 9 is a gate pad, 10 is a transistor, 11 is a gate electrode, and 12 is a passage.
Claims (1)
ンジスタと該トランジスタに接続される保護用電
界効果トランジスタとを具備する半導体装置に於
いて、前記保護用電界効果トランジスタのソース
・ドレインは前記トランジスタのゲートまたはベ
ースの電流通路間に直列に接続され、更にイオン
注入法により形成された前記保護用電界効果トラ
ンジスタのゲート拡散領域が前記トランジスタの
ソースまたはエミツタに接続されることを特徴と
した半導体装置。 (2) 実用新案登録請求の範囲第１項に於いて、
前記保護用電界効果トランジスタが並列に複数接
続されることを特徴とした半導体装置。[Claims for Utility Model Registration] (1) In a semiconductor device comprising at least a transistor formed on a semiconductor substrate and a protective field effect transistor connected to the transistor, a source of the protective field effect transistor - The drain is connected in series between the current paths of the gate or base of the transistor, and the gate diffusion region of the protective field effect transistor formed by ion implantation is connected to the source or emitter of the transistor. Featured semiconductor devices. (2) In paragraph 1 of the claims for utility model registration,
A semiconductor device characterized in that a plurality of the protection field effect transistors are connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14446286U JPH0648837Y2 (en) | 1986-09-19 | 1986-09-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14446286U JPH0648837Y2 (en) | 1986-09-19 | 1986-09-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6350144U true JPS6350144U (en) | 1988-04-05 |
| JPH0648837Y2 JPH0648837Y2 (en) | 1994-12-12 |
Family
ID=31055087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14446286U Expired - Lifetime JPH0648837Y2 (en) | 1986-09-19 | 1986-09-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0648837Y2 (en) |
-
1986
- 1986-09-19 JP JP14446286U patent/JPH0648837Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0648837Y2 (en) | 1994-12-12 |
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