JPS6228452U - - Google Patents
Info
- Publication number
- JPS6228452U JPS6228452U JP12051685U JP12051685U JPS6228452U JP S6228452 U JPS6228452 U JP S6228452U JP 12051685 U JP12051685 U JP 12051685U JP 12051685 U JP12051685 U JP 12051685U JP S6228452 U JPS6228452 U JP S6228452U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- condenser microphone
- diode
- junction
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の一実施例であるコンデンサマ
イク用半導体装置の等価回路図、第２図は本考案
のコンデンサマイク用半導体装置を組み込んだチ
ツプを説明する上面図、第３図は本考案の半導体
装置を用いたコンデンサマイクを説明する回路図
、第４図は従来のコンデンサマイク用半導体装置
の等価回路図、第５図は従来の半導体装置を用い
たコンデンサマイクを説明する回路図である。
主な図番の説明、１はコンデンサマイク用半導
体装置、２はＪ−ＦＥＴ、３は高抵抗体、４は接
合ダイオード、５はダイオード、６はＰ＋型の分
離領域、７は第１の島領域、８は第２の島領域、
９は第３の島領域である。
Fig. 1 is an equivalent circuit diagram of a semiconductor device for a condenser microphone according to an embodiment of the present invention, Fig. 2 is a top view illustrating a chip incorporating the semiconductor device for a condenser microphone according to the present invention, and Fig. 3 is an equivalent circuit diagram of a semiconductor device for a condenser microphone according to the present invention. 4 is an equivalent circuit diagram of a conventional semiconductor device for a condenser microphone, and FIG. 5 is a circuit diagram illustrating a condenser microphone using a conventional semiconductor device. . Explanation of main figure numbers: 1 is a semiconductor device for a condenser microphone, 2 is a J-FET, 3 is a high resistance element, 4 is a junction diode, 5 is a diode, 6 is a P + type isolation region, 7 is a first island area, 8 is the second island area,
9 is the third island area.
Claims (1)
半導体素子のゲート・ソース間に接続した接合ダ
イオードおよび高抵抗素子とを同一チツプ内に形
成するコンデンサマイク用半導体装置に於いて、
前記接合ダイオードと直列かつ逆方向にダイオー
ドを接続することを特徴としたコンデンサマイク
用半導体装置。 In a semiconductor device for a condenser microphone in which a junction field effect semiconductor element, a junction diode and a high resistance element connected between the gate and source of the junction field effect semiconductor element are formed in the same chip,
A semiconductor device for a condenser microphone, characterized in that a diode is connected in series and in the opposite direction to the junction diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12051685U JPS6228452U (en) | 1985-08-06 | 1985-08-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12051685U JPS6228452U (en) | 1985-08-06 | 1985-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6228452U true JPS6228452U (en) | 1987-02-20 |
Family
ID=31008901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12051685U Pending JPS6228452U (en) | 1985-08-06 | 1985-08-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6228452U (en) |
-
1985
- 1985-08-06 JP JP12051685U patent/JPS6228452U/ja active Pending