JPS6315066U - - Google Patents
Info
- Publication number
- JPS6315066U JPS6315066U JP10716186U JP10716186U JPS6315066U JP S6315066 U JPS6315066 U JP S6315066U JP 10716186 U JP10716186 U JP 10716186U JP 10716186 U JP10716186 U JP 10716186U JP S6315066 U JPS6315066 U JP S6315066U
- Authority
- JP
- Japan
- Prior art keywords
- island region
- transistor
- island
- region
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 claims 3
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
Description
第1図は本考案を説明するための断面図、第2
図は従来例を説明するための断面図である。
21はP型半導体基板、25aは第1の島領域
、25bは第2の島領域、25cは第3の島領域
、25dは第4の島領域、32は第1領域、33
は第2領域、35,36…42は電極である。
Figure 1 is a sectional view for explaining the present invention, Figure 2 is a sectional view for explaining the present invention.
The figure is a sectional view for explaining a conventional example. 21 is a P-type semiconductor substrate, 25a is a first island region, 25b is a second island region, 25c is a third island region, 25d is a fourth island region, 32 is a first region, 33
is the second region, and 35, 36, . . . , 42 are electrodes.
Claims (1)
記島領域に形成した出力トランジスタと、第2の
前記島領域に形成した他のトランジスタとを具備
し、前記出力トランジスタと前記他のトランジス
タとの間で寄生トランジスタを生ずる半導体集積
回路において、前記第1の島領域と前記第2の島
領域との間に高電位にバイアスした第3の島領域
を設けることにより前記寄生トランジスタのコレ
クタ電流が全て前記第3の島領域から供給される
ように形成し、且つ前記第1の島領域と前記第3
の島領域との間にフローテイングにした第4の島
領域を設けることにより前記寄生トランジスタの
hFEを減じたことを特徴とする半導体集積回路
。 It includes a plurality of island regions separated into island shapes, an output transistor formed in the first island region, and another transistor formed in the second island region, and the output transistor and the other transistor are formed in the second island region. In a semiconductor integrated circuit in which a parasitic transistor is generated between the transistor and the collector of the parasitic transistor, a third island region biased to a high potential is provided between the first island region and the second island region. The current is formed so that all of the current is supplied from the third island region, and the first island region and the third island region
A semiconductor integrated circuit characterized in that hFE of the parasitic transistor is reduced by providing a floating fourth island region between the island region and the island region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10716186U JPS6315066U (en) | 1986-07-11 | 1986-07-11 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10716186U JPS6315066U (en) | 1986-07-11 | 1986-07-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6315066U true JPS6315066U (en) | 1988-02-01 |
Family
ID=30983186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10716186U Pending JPS6315066U (en) | 1986-07-11 | 1986-07-11 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6315066U (en) |
-
1986
- 1986-07-11 JP JP10716186U patent/JPS6315066U/ja active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6315066U (en) | ||
JPS6315065U (en) | ||
JPH0338638U (en) | ||
JPS6333644U (en) | ||
JPH0165152U (en) | ||
JPS58164250U (en) | semiconductor temperature sensing element | |
JPH01100459U (en) | ||
JPH0467356U (en) | ||
JPH0316358U (en) | ||
JPS5885362U (en) | semiconductor integrated device | |
JPS63177066U (en) | ||
JPH0415235U (en) | ||
JPS60149149U (en) | CMOS integrated circuit | |
JPH029452U (en) | ||
JPS60144255U (en) | transistor | |
JPS6379639U (en) | ||
JPS6228452U (en) | ||
JPS58106953U (en) | transistor | |
JPH0165150U (en) | ||
JPS63114044U (en) | ||
JPS6312858U (en) | ||
JPS61102057U (en) | ||
JPH0337314B2 (en) | ||
JPS6312856U (en) | ||
JPS62204353U (en) |