JPH029452U - - Google Patents
Info
- Publication number
- JPH029452U JPH029452U JP8751488U JP8751488U JPH029452U JP H029452 U JPH029452 U JP H029452U JP 8751488 U JP8751488 U JP 8751488U JP 8751488 U JP8751488 U JP 8751488U JP H029452 U JPH029452 U JP H029452U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- semiconductor region
- diode
- providing
- constant voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図乃至第９図は本考案に係る定電圧素子の
一実施例を説明するためのもので、第１図は素子
構造を示す断面図、第２図は第１図の等価回路図
、第３図乃至第９図は第１図の定電圧素子の製造
工程を説明するための各断面図である。第１０図
はツエナーダイオードと順方向接合のダイオード
を使用した定電圧素子を示す基本回路図、第１１
図は第１０図の定電圧素子の具体的回路図である
。
１０……定電圧素子、１１……半導体基板、１
２……絶縁分離領域、１３……第１のダイオード
、１４……第２のダイオード、１５〜１８……半
導体領域。
1 to 9 are for explaining one embodiment of the constant voltage element according to the present invention, FIG. 1 is a sectional view showing the element structure, FIG. 2 is an equivalent circuit diagram of FIG. 1, 3 to 9 are cross-sectional views for explaining the manufacturing process of the constant voltage element shown in FIG. 1. Figure 10 is a basic circuit diagram showing a constant voltage element using a Zener diode and a forward junction diode.
The figure is a specific circuit diagram of the constant voltage element shown in FIG. 10. 10... Constant voltage element, 11... Semiconductor substrate, 1
2... Insulating isolation region, 13... First diode, 14... Second diode, 15-18... Semiconductor region.
Claims (1)
導電型不純物の半導体領域を設けてツエナーブレ
イクダウンを生起させる第１のダイオードを形成
し、上記第１の他導電型半導体領域内に第２の一
導電型不純物の半導体領域を設けて順方向接合の
第２のダイオードを形成したことを特徴とする定
電圧素子。 A first diode for causing Zener breakdown is formed by providing a first semiconductor region of another conductivity type and one conductivity type impurity in the one conductivity type semiconductor region; 1. A constant voltage element comprising: a second diode having a forward junction formed by providing a semiconductor region containing one conductivity type impurity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8751488U JPH029452U (en) | 1988-06-30 | 1988-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8751488U JPH029452U (en) | 1988-06-30 | 1988-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH029452U true JPH029452U (en) | 1990-01-22 |
Family
ID=31312119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8751488U Pending JPH029452U (en) | 1988-06-30 | 1988-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH029452U (en) |
-
1988
- 1988-06-30 JP JP8751488U patent/JPH029452U/ja active Pending