JPH0263555U - - Google Patents
Info
- Publication number
- JPH0263555U JPH0263555U JP14397288U JP14397288U JPH0263555U JP H0263555 U JPH0263555 U JP H0263555U JP 14397288 U JP14397288 U JP 14397288U JP 14397288 U JP14397288 U JP 14397288U JP H0263555 U JPH0263555 U JP H0263555U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistor
- substrate
- conductivity type
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
Description
第１図は本考案によるＮ型抵抗内蔵論理回路の
断面図、第２図は第１図に示す装置の等価回路、
第３図は従来のＩ２Ｌの回路図である。
１……入力、２……出力、３……電源、４……
Ｎ＋型半導体基板、５……Ｐ型はエピタキシヤル
層、６……Ｎ＋型カラー層、７……Ｎ型抵抗部、
８……Ｎ型抵抗層、Ｔｒ３……インバータＮＰＮ
トランジスタ部。
FIG. 1 is a cross-sectional view of a logic circuit with a built-in N-type resistor according to the present invention, and FIG. 2 is an equivalent circuit of the device shown in FIG.
FIG. 3 is a circuit diagram of a conventional I 2 L. 1...Input, 2...Output, 3...Power supply, 4...
N + type semiconductor substrate, 5...P type epitaxial layer, 6...N + type collar layer, 7...N type resistor section,
8...N-type resistance layer, Tr 3 ...Inverter NPN
Transistor section.
Claims (1)
キシヤル層、および (c) 該エピタキシヤル層を左右に分離する第１
導電型拡散層 を備え、分離された一方のエピタキシヤル層を
トランジスタのベース、他方を抵抗の島領域とす
る ことを特徴とするＮ型抵抗内蔵論理回路。[Claims for Utility Model Registration] (a) a first conductivity type semiconductor layer substrate with high impurity concentration, (b) a second conductivity type epitaxial layer formed above the substrate, and (c) a layer on the right and left sides of the epitaxial layer. The first to separate into
A logic circuit with a built-in N-type resistor, characterized in that it is provided with a conductive type diffusion layer, and one of the separated epitaxial layers is used as a base of a transistor, and the other is used as an island region of a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14397288U JPH0263555U (en) | 1988-11-01 | 1988-11-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14397288U JPH0263555U (en) | 1988-11-01 | 1988-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0263555U true JPH0263555U (en) | 1990-05-11 |
Family
ID=31411273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14397288U Pending JPH0263555U (en) | 1988-11-01 | 1988-11-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0263555U (en) |
-
1988
- 1988-11-01 JP JP14397288U patent/JPH0263555U/ja active Pending
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