JPH0263556U - - Google Patents
Info
- Publication number
- JPH0263556U JPH0263556U JP14397388U JP14397388U JPH0263556U JP H0263556 U JPH0263556 U JP H0263556U JP 14397388 U JP14397388 U JP 14397388U JP 14397388 U JP14397388 U JP 14397388U JP H0263556 U JPH0263556 U JP H0263556U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- layer
- epitaxial layer
- resistor
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
Description
第１図は本考案によるＮ型抵抗内蔵論理回路の
断面図、第２図は第１図に示す装置の等価回路、
第３図は従来のＩ２Ｌの回路図である。
１……入力、２……出力、３……電源、４……
Ｎ＋型半導体基板、５……Ｎ型はエピタキシヤル
層、６……Ｎ＋型カラー層、７……Ｎ型抵抗部、
８……Ｎ型抵抗層、９……Ｎ＋型埋込層、１０…
…Ｐウエル、１１……アイソレーシヨン拡散層、
Ｔｒ３……インバータＮＰＮトランジスタ部。
FIG. 1 is a cross-sectional view of a logic circuit with a built-in N-type resistor according to the present invention, and FIG. 2 is an equivalent circuit of the device shown in FIG.
FIG. 3 is a circuit diagram of a conventional I 2 L. 1...Input, 2...Output, 3...Power supply, 4...
N + type semiconductor substrate, 5...N type epitaxial layer, 6...N + type collar layer, 7...N type resistor section,
8...N-type resistance layer, 9...N + type buried layer, 10...
...P well, 11...isolation diffusion layer,
Tr3 ...Inverter NPN transistor section.
Claims (1)
層、 (c) 上記上方に形成された第２導電型エピタキ
シヤル層、および (d) 該エピタキシヤル層表面から上記第２導電
型埋込み層に達し、上記エピタキシヤル層を分割
する第２導電型カラー層 を備え、分離された一方のエピタキシヤル層を
トランジスタの活性ベース、他方を抵抗の島領域
とする ことを特徴とするＮ型抵抗内蔵論理回路。[Claims for Utility Model Registration] (a) a first conductivity type semiconductor substrate; (b) a second conductivity type buried layer formed on the substrate; (c) a second conductivity type epitaxial layer formed above the above. and (d) a second conductivity type collar layer that reaches from the surface of the epitaxial layer to the second conductivity type buried layer and divides the epitaxial layer, and one of the separated epitaxial layers is connected to a transistor. A logic circuit with a built-in N-type resistor, characterized in that one base is an active base and the other is a resistor island region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14397388U JPH0263556U (en) | 1988-11-01 | 1988-11-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14397388U JPH0263556U (en) | 1988-11-01 | 1988-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0263556U true JPH0263556U (en) | 1990-05-11 |
Family
ID=31411274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14397388U Pending JPH0263556U (en) | 1988-11-01 | 1988-11-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0263556U (en) |
-
1988
- 1988-11-01 JP JP14397388U patent/JPH0263556U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1330790A (en) | Semiconductor devices | |
| JPH0173953U (en) | ||
| JPH0263556U (en) | ||
| JPH0263555U (en) | ||
| JPS6424862U (en) | ||
| JPS63128735U (en) | ||
| JPH0289855U (en) | ||
| JPH0467356U (en) | ||
| JPS6210452U (en) | ||
| JPH0244354U (en) | ||
| JPH01169048U (en) | ||
| JPS61168654U (en) | ||
| JPS6179544U (en) | ||
| JPS61174754U (en) | ||
| JPS6411557U (en) | ||
| JPS61114854U (en) | ||
| JPS648737U (en) | ||
| JPS6268252U (en) | ||
| JPS63177066U (en) | ||
| JPH029452U (en) | ||
| JPS59131156U (en) | semiconductor integrated circuit | |
| JPH0325254U (en) | ||
| JPS63105360U (en) | ||
| JPH0241459U (en) | ||
| JPS63172152U (en) |