JPS61242061A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS61242061A JPS61242061A JP60083839A JP8383985A JPS61242061A JP S61242061 A JPS61242061 A JP S61242061A JP 60083839 A JP60083839 A JP 60083839A JP 8383985 A JP8383985 A JP 8383985A JP S61242061 A JPS61242061 A JP S61242061A
- Authority
- JP
- Japan
- Prior art keywords
- base
- collector
- pnp transistor
- emitter
- lateral pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 230000002441 reversible effect Effects 0.000 claims abstract description 7
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体集積回路装置、詳しくは集積注入論理回
路（Ｉｎｔｅｇｒａｔｅｄ Ｉｎｊｅｃｔｉｏｎ Ｌｏ
ｇｉｃ。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to semiconductor integrated circuit devices, specifically integrated injection logic circuits.
gic.
以下ＩＬと略す）の改良に関するものである。This paper relates to the improvement of IL (hereinafter abbreviated as IL).
従来の技術 −
従来、ＭＬはラテラルＰＮＰ トランジスタと縦方向の
逆動作ＮＰＮトランジスタを組み合わせて一体とした論
理回路で、第２図に示すようなデバイス断面構造をとる
ことが多かった。同図において、１はＰ型基板、２はＮ
型埋込層、３はＮ型エピタキシャル層、４は？型拡散層
、５はＩＬ素子のインジェクタと呼ばれるラテラルＰＮ
Ｐ トランジスタのエミッタ（Ｐ型）、６はインジェク
タＰＮＰトランジスタのコレクタおよびＮＰＮトランジ
スタのベースとなるり型拡散層、７−１．７−２は？拡
散層、８は二酸化シリコンなどの絶縁膜、９はアルミニ
ウム電極である。このよりなＩＬは通常のバイポーラＩ
Ｃ’の製造プロセスで製造することかで＋
き、Ｐ拡散層６，６をラテラルＰＮＰ トランジスタの
エミッタとコレクタとして動作させ、そのベースはＮ型
エピタキシャル層３とし、他方、逆動作ＮＰＮトランジ
スタは ａ＋埋込層２およびＮ型エピタキシャル層３を
エミッタ、Ｐ拡散層６をベース、Ｎ〜散層７−１．７−
２をそのコレクタとしている。Prior Art - Conventionally, an ML is a logic circuit that is integrated by combining a lateral PNP transistor and a vertical reverse-action NPN transistor, and has often had a device cross-sectional structure as shown in FIG. In the same figure, 1 is a P-type substrate, 2 is an N-type substrate
Type buried layer, 3 is N type epitaxial layer, 4 is ? type diffusion layer, 5 is a lateral PN called the injector of the IL element
Emitter of P transistor (P type), 6 is a rectangular diffusion layer that becomes the collector of the injector PNP transistor and the base of the NPN transistor, 7-1.7-2? A diffusion layer, 8 an insulating film such as silicon dioxide, and 9 an aluminum electrode. This twisted IL is a normal bipolar I
By manufacturing with the manufacturing process of C', the P diffusion layers 6, 6 are operated as the emitter and collector of a lateral PNP transistor, the base of which is the N type epitaxial layer 3, while the reverse operation NPN transistor is a+ Buried layer 2 and N-type epitaxial layer 3 as emitter, P diffusion layer 6 as base, N ~ diffused layer 7-1.7-
2 as its collector.
このような構成にすることにより、集積密度を向上させ
、また、ゲート当りの消費電力も著しく低減させうろこ
とが知られている。It is known that such a configuration can improve the integration density and significantly reduce power consumption per gate.
発明が解決しようとする問題点
しかしながら従来の構造では、・ラテラルＰＮＰトラン
ジスタのコレクタに供給された正孔がＮＰＮトランジス
タのペース電流となるが、はとんどの正孔は、ラテラル
ＰＮＰ トランジスタのコレクタ６から逆注入されてエ
ミッタ５に戻ってしまい、ＮＰＮトランジスタのコレク
タ７−１．７−２を駆動するベース電流が充分にとれな
いという欠点がある。Problems to be Solved by the Invention However, in the conventional structure, the holes supplied to the collector of the lateral PNP transistor become the pace current of the NPN transistor; The disadvantage is that the base current is injected back from the source and returns to the emitter 5, making it impossible to obtain a sufficient base current to drive the collector 7-1, 7-2 of the NPN transistor.
本発明は、前述の従来構造の欠点、すなわちラテラルＰ
ＮＰトランジスタの逆注入を減少せしめる構造に係るも
のである。The present invention solves the drawbacks of the conventional structure mentioned above, namely, the lateral P
The present invention relates to a structure that reduces back injection of an NP transistor.
問題点を解決するための手段
本発明の装置は、ラテラルＰＩＰ トランジスタのペー
ス領域がコレクタ側よりもエミッタ側で低濃度になった
構造とするものである。Means for Solving the Problems The device of the present invention has a structure in which the space region of the lateral PIP transistor has a lower concentration on the emitter side than on the collector side.
作用
この構造によると、ラテラルＰＮＰ ）う／ジスタのペ
ース・エミッタ接合の順方向飽和電流が、ペース・コレ
クタ接合飽和電流よりも大きくなり、このため、ＮＰＮ
ベース電位、すなわちＰＮＰコレクタ電位を同じとした
時、逆方向注入電流に対し順方向注入電流が増加でき、
正味のＮＰＮトランジスタのベース電流を数倍に増加さ
せる。Effect: According to this structure, the forward saturation current of the pace-emitter junction of the lateral PNP transistor becomes larger than the pace-collector junction saturation current, so that the NPN
When the base potential, that is, the PNP collector potential is the same, the forward injection current can increase relative to the reverse injection current,
Increases the net NPN transistor base current several times.
実施例
第１図に本発明の実施例を断面図で示す。１はＰ型基板
、２は「型埋込層、３はＮ型エピタキシャル層、４は「
型拡散層、６はＩ２Ｌ素子のインジェクタ、６はインジ
ェクタＰＮＰ トランジスタのコレクタおよびＮＰＮト
ランジスタのペースとなル？拡散ｒＷｔ、７−１ 、７
−２ハＮ”拡散層、８は二酸化シリコンなどの絶縁膜、
９はアルミニウム電極である。Embodiment FIG. 1 shows a cross-sectional view of an embodiment of the present invention. 1 is a P-type substrate, 2 is a "type buried layer, 3 is an N-type epitaxial layer, and 4 is a"
type diffusion layer, 6 is the injector of the I2L element, 6 is the injector PNP transistor collector and the NPN transistor pace. Diffusion rWt, 7-1, 7
-2N” diffusion layer, 8 is an insulating film such as silicon dioxide,
9 is an aluminum electrode.
この実施例では、ラテラルＰＮＰトランジスタのベース
領域１０のエミッタ側に低濃度Ｎ型領域１１を設けた構
造である。前記低濃度Ｎ型領域１１１は、ボロンをビー
ズ量１ｘ１ｏ／ｄ程度でイオン注入後、拡散してコンペ
ンセートして形成することができる。あるいは低濃度Ｎ
型領域１１に対応する表面を除く周辺のベース領域１０
にリンあるいはヒ素をイオン注入し、拡散して形成する
こともできる。This embodiment has a structure in which a lightly doped N-type region 11 is provided on the emitter side of a base region 10 of a lateral PNP transistor. The low concentration N-type region 111 can be formed by ion-implanting boron in a bead amount of about 1×1 o/d and then diffusing and compensating. Or low concentration N
Peripheral base region 10 excluding the surface corresponding to mold region 11
It can also be formed by ion-implanting phosphorus or arsenic and diffusing it.
発明の効果
本発明によるＩ２Ｌ構造にすることによって、ラテラル
ＰＮＰトランジスタの逆方向電流を著しく低減でき、逆
動作ＮＰＮ ）ジンジスタの実効ペース電流を増加させ
ることができる。これにより、従来構造のＩ２Ｌよりも
、より低消費電力で安定なインバータ動作をさせること
ができるＩＬが実現され、本発明の装置は、工業上大き
な利益をもたらすものである。Effects of the Invention By adopting the I2L structure according to the present invention, the reverse current of the lateral PNP transistor can be significantly reduced, and the effective pace current of the reverse-acting NPN transistor can be increased. As a result, an IL that can operate an inverter more stably with lower power consumption than an I2L having a conventional structure is realized, and the device of the present invention brings great industrial benefits.
第１図は本発明によるＩ２Ｌの実施例断面図、第２図は
従来例断面口である。
１・・・・・・Ｐ型基板、２・・・・・・Ｎ 埋込層、
３・・・・・・Ｎ型エピタキシャル層、５・・・・・・
ラテラルＰＮＰ トランジスタのエミッタ、６・・・・
・・ラテラルＰＮＰ ）う／ジスタのコレクタおよびＮ
ＰＮトランジスタのペース、１０・・・・・・ラテラル
ＰＮＰ トランジスタのベース領域、１１・・・・・・
低濃度Ｎ型ベース領域。
宵 Ｉ ５ｉ ４−ＰＩ
基砥萬 ２！！ｒFIG. 1 is a sectional view of an embodiment of I2L according to the present invention, and FIG. 2 is a sectional view of a conventional example. 1...P type substrate, 2...N buried layer,
3...N-type epitaxial layer, 5...
Lateral PNP transistor emitter, 6...
・・Lateral PNP) U/DIST collector and N
Pace of PN transistor, 10... Lateral PNP transistor base region, 11...
Low concentration N type base region. Evening I 5i 4-PI
Motoman 2! ! r
Claims (1)
れぞれ逆動作ＮＰＮトランジスタのエミッタとベースに
対応させ、前記逆動作ＮＰＮトランジスタのベース領域
内に複数のコレクタをそなえ、前記ラテラルＰＮＰトラ
ンジスタのベース領域を、同トランジスタのコレクタ側
よりもエミッタ側で低濃度になしたことを特徴とする半
導体装置。A base and a collector of the lateral PNP transistor correspond to an emitter and a base of a reverse operation NPN transistor, respectively, a plurality of collectors are provided in the base region of the reverse operation NPN transistor, and a base region of the lateral PNP transistor is connected to the collector of the transistor. A semiconductor device characterized by having a lower concentration on the emitter side than on the emitter side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60083839A JPH0715944B2 (en) | 1985-04-19 | 1985-04-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60083839A JPH0715944B2 (en) | 1985-04-19 | 1985-04-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61242061A true JPS61242061A (en) | 1986-10-28 |
| JPH0715944B2 JPH0715944B2 (en) | 1995-02-22 |
Family
ID=13813869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60083839A Expired - Lifetime JPH0715944B2 (en) | 1985-04-19 | 1985-04-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715944B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128954A (en) * | 1981-02-04 | 1982-08-10 | Hitachi Ltd | Iil semiconductor device |
-
1985
- 1985-04-19 JP JP60083839A patent/JPH0715944B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128954A (en) * | 1981-02-04 | 1982-08-10 | Hitachi Ltd | Iil semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0715944B2 (en) | 1995-02-22 |
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