JPS61188366U

JPS61188366U -

Info

Publication number: JPS61188366U
Application number: JP7063485U
Authority: JP
Priority date: 1985-05-15
Filing date: 1985-05-15
Publication date: 1986-11-25

Description

[Brief explanation of the drawing]

第１図は本考案の一実施例の略式断面図、第２
図は本考案の等価電気回路である。１……半導体基板、２……エピタキシヤル層、
３……第２のトランジスタのベース、第１のトラ
ンジスタのドレイン、４……第２のトランジスタ
のエミツタ、５……第３のトランジスタのゲート
、６……第１のトランジスタのソース、７……第
１のトランジスタのゲート、１３……第１のトラ
ンジスタ、１４……第２のトランジスタ、１５…
…第３のトランジスタ、１６……コレクタ端子、
１７……エミツタ端子、１８……ゲート端子。 Fig. 1 is a schematic sectional view of one embodiment of the present invention;
The figure shows an equivalent electric circuit of the present invention. 1... Semiconductor substrate, 2... Epitaxial layer,
3... Base of the second transistor, drain of the first transistor, 4... Emitter of the second transistor, 5... Gate of the third transistor, 6... Source of the first transistor, 7... Gate of first transistor, 13...first transistor, 14...second transistor, 15...
...Third transistor, 16...Collector terminal,
17... Emitter terminal, 18... Gate terminal.

Claims

[Scope of utility model registration request]

When a Darlington circuit is monolithically integrated in a semiconductor body, and the input transistor of the Darlington circuit is a first transistor and the output transistor is a second transistor,
In the semiconductor device, the first transistor is formed by a lateral enhancement type insulated gate field effect transistor, and the second transistor is formed by a vertical bipolar power transistor. A third transistor formed by a normally-on junction field effect transistor is provided, the third transistor is connected in parallel with the emitter-base junction of the second transistor, and the third transistor is connected in parallel with the emitter-base junction of the second transistor.
A composite power semiconductor device characterized in that the gate electrodes of the transistors are interconnected.