JPS6217157U - - Google Patents

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Publication number
JPS6217157U
JPS6217157U JP10685385U JP10685385U JPS6217157U JP S6217157 U JPS6217157 U JP S6217157U JP 10685385 U JP10685385 U JP 10685385U JP 10685385 U JP10685385 U JP 10685385U JP S6217157 U JPS6217157 U JP S6217157U
Authority
JP
Japan
Prior art keywords
bipolar transistor
region
type
parasitic
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10685385U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10685385U priority Critical patent/JPS6217157U/ja
Publication of JPS6217157U publication Critical patent/JPS6217157U/ja
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明に係るトランジスタの等価回
路図、第2図は、同トランジスタのパターンの概
略図、第3図は、同トランジスタの断面図である
。 10…N型コレクタ領域、11…P型ベース領
域および寄生P型MOSチヤネルのドレイン領域
、12…N型エミツタ領域、13…P型分離領域
および寄生P型MOSチヤネルのソース領域、1
4…寄生P型MOSチヤネルのゲート領域。
FIG. 1 is an equivalent circuit diagram of a transistor according to the present invention, FIG. 2 is a schematic diagram of a pattern of the transistor, and FIG. 3 is a cross-sectional view of the transistor. 10... N-type collector region, 11... P-type base region and drain region of parasitic P-type MOS channel, 12... N-type emitter region, 13... P-type isolation region and source region of parasitic P-type MOS channel, 1
4...Gate region of parasitic P-type MOS channel.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] バイポーラ型トランジスタによるスイツチング
において、前記バイポーラ型トランジスタに生じ
た寄生チヤネルに負の電圧を印加することを特徴
とするバイポーラ型トランジスタ。
A bipolar transistor characterized in that, in switching using a bipolar transistor, a negative voltage is applied to a parasitic channel generated in the bipolar transistor.
JP10685385U 1985-07-15 1985-07-15 Pending JPS6217157U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10685385U JPS6217157U (en) 1985-07-15 1985-07-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10685385U JPS6217157U (en) 1985-07-15 1985-07-15

Publications (1)

Publication Number Publication Date
JPS6217157U true JPS6217157U (en) 1987-02-02

Family

ID=30982597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10685385U Pending JPS6217157U (en) 1985-07-15 1985-07-15

Country Status (1)

Country Link
JP (1) JPS6217157U (en)

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