JPH02116134U - - Google Patents
Info
- Publication number
- JPH02116134U JPH02116134U JP2483189U JP2483189U JPH02116134U JP H02116134 U JPH02116134 U JP H02116134U JP 2483189 U JP2483189 U JP 2483189U JP 2483189 U JP2483189 U JP 2483189U JP H02116134 U JPH02116134 U JP H02116134U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- base
- mos
- turn
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002955 isolation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Electronic Switches (AREA)
Description
第１図は本考案のＭＯＳ ＦＥＴのゲート駆動
装置の一実施例を示す回路図、第２図は従来のＭ
ＯＳ ＦＥＴのゲート駆動装置を示す回路図であ
る。
１……パルストランス、２……ダイオード、３
……トランジスタ、４……抵抗、５……抵抗、６
……ツエナーダイオード、７……ＭＯＳ ＦＥＴ
、８……ゲート・ソース間の入力容量。
Fig. 1 is a circuit diagram showing an embodiment of the gate driving device for a MOS FET according to the present invention, and Fig. 2 is a circuit diagram showing an example of a gate driving device for a MOS FET according to the present invention.
FIG. 2 is a circuit diagram showing a gate driving device for an OS FET. 1...Pulse transformer, 2...Diode, 3
...Transistor, 4...Resistor, 5...Resistor, 6
...Zener diode, 7...MOS FET
, 8...Input capacitance between gate and source.
Claims (1)
トランスの二次側を半波整流するダイオードと、
このダイオードを直列接続し、ＭＯＳ ＦＥＴの
ターンオン・ターンオフ時間を設定する抵抗と、
前記ダイオードのカソード側にエミツタ、ＭＯＳ
ＦＥＴのソース側にコレクタ、ダイオードのア
ノード側にベースをそれぞれ接続したＰＮＰトラ
ンジスタと、前記トランジスタのベース・コレク
タ間に接続したベース電流制限用の抵抗とから成
ることを特徴とするＭＯＳ ＦＥＴのゲート駆動
装置。 A pulse transformer that performs circuit isolation, a diode that performs half-wave rectification on the secondary side of this pulse transformer,
A resistor that connects this diode in series and sets the turn-on/turn-off time of the MOS FET,
Emitter and MOS on the cathode side of the diode
A gate drive for a MOS FET characterized by comprising a PNP transistor having a collector connected to the source side of the FET and a base connected to the anode side of a diode, and a base current limiting resistor connected between the base and collector of the transistor. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2483189U JPH02116134U (en) | 1989-03-06 | 1989-03-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2483189U JPH02116134U (en) | 1989-03-06 | 1989-03-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02116134U true JPH02116134U (en) | 1990-09-18 |
Family
ID=31245030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2483189U Pending JPH02116134U (en) | 1989-03-06 | 1989-03-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02116134U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11699945B2 (en) | 2020-08-20 | 2023-07-11 | Tdk Corporation | Drive circuit and switching power supply device |
-
1989
- 1989-03-06 JP JP2483189U patent/JPH02116134U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11699945B2 (en) | 2020-08-20 | 2023-07-11 | Tdk Corporation | Drive circuit and switching power supply device |
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