JPS62180962U - - Google Patents

Description

[Brief explanation of drawings]

Figures 1a and b are a plan view and a cross-sectional view showing the structure of a conventional lateral PNP transistor, Figure 2 is an equivalent circuit diagram of a lateral PNP transistor, and Figure 3 is an equivalent circuit diagram of a lateral PNP transistor.
Figure a is a circuit diagram of a capacitive load driving stage, Figure b is a circuit diagram of a high resistance load driving stage, and Figure 4 is a circuit diagram of a lateral P
Figure 5 shows the relationship between h _fe and collector current of the first and second collectors. Figure 6 shows the Schottky clamp type lateral PNP transistor of the present invention. The equivalent circuit diagrams shown in FIGS. 7A and 7B are a plan view and a sectional view of a shot-key clamp type lateral PNP transistor, and FIG. 8 is a diagram showing a capacitive load drive circuit. 1...P type layer, 2...P type layer, 3...N ⁺ type layer, 4...N type epitaxial layer.

Claims (1)

[Scope of utility model registration request] A semiconductor layer of another conductivity type formed on a semiconductor substrate of one conductivity type is used as a base, and first and second regions of another conductivity type formed separately on the semiconductor layer are used as an emitter and a collector, respectively. A semiconductor device comprising: a Schottky diode having an anode connected to the collector and a cathode connected to the base between the base and the collector of the lateral transistor.