JPS6287457U - - Google Patents

Info

Publication number
JPS6287457U
JPS6287457U JP17811285U JP17811285U JPS6287457U JP S6287457 U JPS6287457 U JP S6287457U JP 17811285 U JP17811285 U JP 17811285U JP 17811285 U JP17811285 U JP 17811285U JP S6287457 U JPS6287457 U JP S6287457U
Authority
JP
Japan
Prior art keywords
layer
thyristor
section
gate turn
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17811285U
Other languages
Japanese (ja)
Other versions
JPH0526771Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985178112U priority Critical patent/JPH0526771Y2/ja
Publication of JPS6287457U publication Critical patent/JPS6287457U/ja
Application granted granted Critical
Publication of JPH0526771Y2 publication Critical patent/JPH0526771Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例の構造を示す断面図、
第2図は製造段階を示す工程図、第3図は本考案
の他の実施例を示す平面図、第4図は逆導通形ゲ
ートターンオフサイリスタを示す回路図、第5図
は従来の逆導通形ゲートターンオフサイリスタの
構造を示す断面図である。 1……主GTO部、2……補助GTO部、3…
…ダイオード部、7,9……カソード電極、8,
10……ゲート電極。
FIG. 1 is a sectional view showing the structure of an embodiment of the present invention;
Fig. 2 is a process diagram showing the manufacturing steps, Fig. 3 is a plan view showing another embodiment of the present invention, Fig. 4 is a circuit diagram showing a reverse conduction type gate turn-off thyristor, and Fig. 5 is a conventional reverse conduction type gate turn-off thyristor. FIG. 2 is a cross-sectional view showing the structure of a gate turn-off thyristor. 1...Main GTO section, 2...Auxiliary GTO section, 3...
...Diode part, 7, 9...Cathode electrode, 8,
10...Gate electrode.

Claims (1)

【実用新案登録請求の範囲】 エミツタ層であるp形半導体のP層とベース
層であるn形半導体のN層及びp形半導体のP
層とエミツタ層であるn形半導体のN層とを
積層して成る主ゲートターンオフサイリスタ部と
、前記ベース層を共有し、前記主ゲートターンオ
フサイリスタ部に逆並列接続されたダイオード部
と、前記ベース層を共有すると共にエミツタ層と
してn形半導体のN層を有し、オン時に前記主
ゲートターンオフサイリスタ部にゲート電流を供
給する補助ゲートターンオフサイリスタ部とを備
えて成る逆導通形ゲートターンオフサイリスタに
おいて、 前記補助ゲートターンオフサイリスタ部を、前
記主ゲートターンオフサイリスタ部とダイオード
部との間に挾まれるように形成すると共に、当該
補助ゲートターンオフサイリスタ部のゲート電極
を、そのカソード電極と主ゲートターンオフサイ
リスタ部のカソード電極との間に配置し、 前記N層と補助ゲートターンオフサイリスタ
部のゲート電極との間に、当該ゲート電極よりの
ゲート電流が前記N層に流れ込まないようにn
形半導体層を設け、 前記主ゲートターンオフサイリスタ部とダイオ
ード部とを分離するために、前記補助ゲートター
ンオフサイリスタ部のN層の深さを制御して当
該N層の直下のP層を高抵抗層に形成したこ
とを特徴とする逆導通形ゲートターンオフサイリ
スタ。
[Claims for Utility Model Registration] P1 layer of p-type semiconductor which is the emitter layer, N1 layer of n-type semiconductor which is the base layer and P1 layer of p-type semiconductor
a main gate turn-off thyristor section formed by laminating two layers and an N2 layer of an n-type semiconductor that is an emitter layer; a diode section that shares the base layer and is connected in antiparallel to the main gate turn-off thyristor section; and an auxiliary gate turn-off thyristor part that shares the base layer and has an N3 layer of n-type semiconductor as an emitter layer, and supplies gate current to the main gate turn-off thyristor part when turned on. In the thyristor, the auxiliary gate turn-off thyristor section is formed to be sandwiched between the main gate turn-off thyristor section and the diode section, and the gate electrode of the auxiliary gate turn-off thyristor section is connected between its cathode electrode and the main gate. The N2 layer is arranged between the cathode electrode of the turn-off thyristor section, and the N2 layer is placed between the N2 layer and the gate electrode of the auxiliary gate turn-off thyristor section so that the gate current from the gate electrode does not flow into the N2 layer.
In order to separate the main gate turn-off thyristor section and the diode section, the depth of the N3 layer of the auxiliary gate turn-off thyristor section is controlled to increase the P2 layer immediately below the N3 layer. A reverse conduction type gate turn-off thyristor characterized by being formed in a high resistance layer.
JP1985178112U 1985-11-19 1985-11-19 Expired - Lifetime JPH0526771Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985178112U JPH0526771Y2 (en) 1985-11-19 1985-11-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985178112U JPH0526771Y2 (en) 1985-11-19 1985-11-19

Publications (2)

Publication Number Publication Date
JPS6287457U true JPS6287457U (en) 1987-06-04
JPH0526771Y2 JPH0526771Y2 (en) 1993-07-07

Family

ID=31119945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985178112U Expired - Lifetime JPH0526771Y2 (en) 1985-11-19 1985-11-19

Country Status (1)

Country Link
JP (1) JPH0526771Y2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453972A (en) * 1977-10-07 1979-04-27 Nec Corp Reverse conducting thyristor
JPS5596678A (en) * 1979-01-18 1980-07-23 Toyo Electric Mfg Co Ltd Reverse conducting thyristor
JPS627162A (en) * 1985-07-03 1987-01-14 Fuji Electric Co Ltd Reverse conductive gate turn off thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453972A (en) * 1977-10-07 1979-04-27 Nec Corp Reverse conducting thyristor
JPS5596678A (en) * 1979-01-18 1980-07-23 Toyo Electric Mfg Co Ltd Reverse conducting thyristor
JPS627162A (en) * 1985-07-03 1987-01-14 Fuji Electric Co Ltd Reverse conductive gate turn off thyristor

Also Published As

Publication number Publication date
JPH0526771Y2 (en) 1993-07-07

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