JPS6287457U - - Google Patents
Info
- Publication number
- JPS6287457U JPS6287457U JP17811285U JP17811285U JPS6287457U JP S6287457 U JPS6287457 U JP S6287457U JP 17811285 U JP17811285 U JP 17811285U JP 17811285 U JP17811285 U JP 17811285U JP S6287457 U JPS6287457 U JP S6287457U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thyristor
- section
- gate turn
- turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000010030 laminating Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の実施例の構造を示す断面図、
第２図は製造段階を示す工程図、第３図は本考案
の他の実施例を示す平面図、第４図は逆導通形ゲ
ートターンオフサイリスタを示す回路図、第５図
は従来の逆導通形ゲートターンオフサイリスタの
構造を示す断面図である。
１……主ＧＴＯ部、２……補助ＧＴＯ部、３…
…ダイオード部、７，９……カソード電極、８，
１０……ゲート電極。
FIG. 1 is a sectional view showing the structure of an embodiment of the present invention;
Fig. 2 is a process diagram showing the manufacturing steps, Fig. 3 is a plan view showing another embodiment of the present invention, Fig. 4 is a circuit diagram showing a reverse conduction type gate turn-off thyristor, and Fig. 5 is a conventional reverse conduction type gate turn-off thyristor. FIG. 2 is a cross-sectional view showing the structure of a gate turn-off thyristor. 1...Main GTO section, 2...Auxiliary GTO section, 3...
...Diode part, 7, 9...Cathode electrode, 8,
10...Gate electrode.
Claims (1)
層であるｎ形半導体のＮ１層及びｐ形半導体のＰ
２層とエミツタ層であるｎ形半導体のＮ２層とを
積層して成る主ゲートターンオフサイリスタ部と
、前記ベース層を共有し、前記主ゲートターンオ
フサイリスタ部に逆並列接続されたダイオード部
と、前記ベース層を共有すると共にエミツタ層と
してｎ形半導体のＮ３層を有し、オン時に前記主
ゲートターンオフサイリスタ部にゲート電流を供
給する補助ゲートターンオフサイリスタ部とを備
えて成る逆導通形ゲートターンオフサイリスタに
おいて、 前記補助ゲートターンオフサイリスタ部を、前
記主ゲートターンオフサイリスタ部とダイオード
部との間に挾まれるように形成すると共に、当該
補助ゲートターンオフサイリスタ部のゲート電極
を、そのカソード電極と主ゲートターンオフサイ
リスタ部のカソード電極との間に配置し、 前記Ｎ２層と補助ゲートターンオフサイリスタ
部のゲート電極との間に、当該ゲート電極よりの
ゲート電流が前記Ｎ２層に流れ込まないようにｎ
形半導体層を設け、 前記主ゲートターンオフサイリスタ部とダイオ
ード部とを分離するために、前記補助ゲートター
ンオフサイリスタ部のＮ３層の深さを制御して当
該Ｎ３層の直下のＰ２層を高抵抗層に形成したこ
とを特徴とする逆導通形ゲートターンオフサイリ
スタ。[Claims for Utility Model Registration] P1 layer of p-type semiconductor which is the emitter layer, N1 layer of n-type semiconductor which is the base layer and P1 layer of p-type semiconductor
a main gate turn-off thyristor section formed by laminating two layers and an N2 layer of an n-type semiconductor that is an emitter layer; a diode section that shares the base layer and is connected in antiparallel to the main gate turn-off thyristor section; and an auxiliary gate turn-off thyristor part that shares the base layer and has an N3 layer of n-type semiconductor as an emitter layer, and supplies gate current to the main gate turn-off thyristor part when turned on. In the thyristor, the auxiliary gate turn-off thyristor section is formed to be sandwiched between the main gate turn-off thyristor section and the diode section, and the gate electrode of the auxiliary gate turn-off thyristor section is connected between its cathode electrode and the main gate. The N2 layer is arranged between the cathode electrode of the turn-off thyristor section, and the N2 layer is placed between the N2 layer and the gate electrode of the auxiliary gate turn-off thyristor section so that the gate current from the gate electrode does not flow into the N2 layer.
In order to separate the main gate turn-off thyristor section and the diode section, the depth of the N3 layer of the auxiliary gate turn-off thyristor section is controlled to increase the P2 layer immediately below the N3 layer. A reverse conduction type gate turn-off thyristor characterized by being formed in a high resistance layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985178112U JPH0526771Y2 (en) | 1985-11-19 | 1985-11-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985178112U JPH0526771Y2 (en) | 1985-11-19 | 1985-11-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6287457U true JPS6287457U (en) | 1987-06-04 |
| JPH0526771Y2 JPH0526771Y2 (en) | 1993-07-07 |
Family
ID=31119945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985178112U Expired - Lifetime JPH0526771Y2 (en) | 1985-11-19 | 1985-11-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0526771Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5453972A (en) * | 1977-10-07 | 1979-04-27 | Nec Corp | Reverse conducting thyristor |
| JPS5596678A (en) * | 1979-01-18 | 1980-07-23 | Toyo Electric Mfg Co Ltd | Reverse conducting thyristor |
| JPS627162A (en) * | 1985-07-03 | 1987-01-14 | Fuji Electric Co Ltd | Reverse conductive gate turn off thyristor |
-
1985
- 1985-11-19 JP JP1985178112U patent/JPH0526771Y2/ja not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5453972A (en) * | 1977-10-07 | 1979-04-27 | Nec Corp | Reverse conducting thyristor |
| JPS5596678A (en) * | 1979-01-18 | 1980-07-23 | Toyo Electric Mfg Co Ltd | Reverse conducting thyristor |
| JPS627162A (en) * | 1985-07-03 | 1987-01-14 | Fuji Electric Co Ltd | Reverse conductive gate turn off thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526771Y2 (en) | 1993-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6287457U (en) | ||
| JPS6257250A (en) | Semiconductor device | |
| JPS6287458U (en) | ||
| JPS62104461U (en) | ||
| JPH0215748U (en) | ||
| JPS62180962U (en) | ||
| JP2502696B2 (en) | Semiconductor integrated circuit device | |
| JPS62118458U (en) | ||
| JPS58106954U (en) | diode | |
| JPS62204353U (en) | ||
| JPS6196560U (en) | ||
| JPH0263555U (en) | ||
| JPS59166452U (en) | Gate turn-off thyristor with amplification gate structure | |
| JPS62118459U (en) | ||
| JPS60136159U (en) | turn-off thyristor | |
| JPS58222569A (en) | Composite semiconductor device | |
| JPH0263556U (en) | ||
| JPH01163348U (en) | ||
| JPS6312864U (en) | ||
| JPH01145146U (en) | ||
| JPS621273A (en) | Reverse-conducting gto thyristor | |
| JPS6186951U (en) | ||
| JPH0279064U (en) | ||
| JPS6338342U (en) | ||
| JPS63224361A (en) | Buried gate gto thyristor |