JPS6338342U

JPS6338342U -

Info

Publication number: JPS6338342U
Application number: JP13108186U
Authority: JP
Priority date: 1986-08-29
Filing date: 1986-08-29
Publication date: 1988-03-11

Description

[Brief explanation of the drawing]

第１図ａおよびｂは本案の光駆動型サイリスタ
の第１実施例を示す平面図および縦断面図、第２
図は従来の光サイリスタの縦断面図、第３図ａ，
ｂおよび第４図は本案の作用効果を原理的に説明
するための図、第５図は第１図の製作プロセス毎
の縦断面図、第６図ａおよびｂは本案の第２の実
施例を示す平面図および縦断面図、第７図ａおよ
びｂは本案の第３の実施例を示す平面図および縦
断面図である。１……ｎベース層、２……ｐベース層、３……
ｐエミツタ層、４……ｎエミツタ層、５……アノ
ード電極、６……カソード電極、７……ライトガ
イド、８……高抵抗領域、９……ｎ型不純物層（
高抵抗領域）、４０……補助ｎエミツタ層、４０
０……受光部ｎエミツタ層、６０……補助カソー
ド電極、６００……受光部部分短絡電極。 1a and 1b are a plan view and a vertical sectional view showing a first embodiment of the light-driven thyristor of the present invention, and a second embodiment of the light-driven thyristor of the present invention.
The figure is a vertical cross-sectional view of a conventional optical thyristor, Figure 3a,
Figures b and 4 are diagrams for explaining the principle of the effects of the present invention, Figure 5 is a longitudinal sectional view of each manufacturing process in Figure 1, and Figures 6 a and b are the second embodiment of the present invention. FIGS. 7a and 7b are a plan view and a longitudinal sectional view showing a third embodiment of the present invention. 1...n base layer, 2...p base layer, 3...
p emitter layer, 4... n emitter layer, 5... anode electrode, 6... cathode electrode, 7... light guide, 8... high resistance region, 9... n type impurity layer (
high resistance region), 40...auxiliary n emitter layer, 40
0... Light receiving part n emitter layer, 60... Auxiliary cathode electrode, 600... Light receiving part partial short circuit electrode.

Claims

[Claims for Utility Model Registration] 1. 4: a first emitter layer of the first conductivity type, a first base layer of the second conductivity type, a second base layer of the first conductivity type, and a second emitter layer of the second conductivity type. In a semiconductor device comprising layers, the layers are sequentially formed so that a pn junction exists between adjacent layers, and an optical gate signal is applied from a second emitter layer, a second base layer and a second emitter layer. a first region that generates a photovoltaic current due to the pn junction photovoltaic effect, a second region having an electrode that shorts the pn junction or shorts it through a desired resistance; the second base layer; a third region for regulating the photovoltaic current provided to increase the density of the photovoltaic current circulating in the second emitter layer; A light-driven semiconductor device characterized by having a structure that does not substantially restrict the current density of current. 2. In claim 1, the third region consists of a recess that reaches the second base layer from the surface giving the optical signal, and at least the third region is formed of a recess that reaches the second base layer in the second region. A light-driven semiconductor device characterized in that the semiconductor devices are arranged in close proximity to each other. 3. In claim 1, the third region has a distance from the pn junction consisting of the second base layer and the second emitter layer in the first region to the pn junction consisting of the first base layer and the second base layer. consisting of a pn junction formed by a second conductivity type layer and a second base layer, which are formed such that the second base layer is short, and is located close to an electrode provided on the second base layer in at least the second region. A light-driven semiconductor device characterized by: