JPH0215748U - - Google Patents

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Publication number
JPH0215748U
JPH0215748U JP9279288U JP9279288U JPH0215748U JP H0215748 U JPH0215748 U JP H0215748U JP 9279288 U JP9279288 U JP 9279288U JP 9279288 U JP9279288 U JP 9279288U JP H0215748 U JPH0215748 U JP H0215748U
Authority
JP
Japan
Prior art keywords
gto thyristor
diode
groove
conduction type
reverse conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9279288U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9279288U priority Critical patent/JPH0215748U/ja
Publication of JPH0215748U publication Critical patent/JPH0215748U/ja
Pending legal-status Critical Current

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  • Thyristors (AREA)
  • Element Separation (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す断面構造図、
第2図は従来の断面構造図、第3図は逆導通形G
TOサイリスタの回路図である。 1……GTOサイリスタ部、2……ダイオード
部、3,8……分離部、4……アノード電極、7
,9……表面保護材。
FIG. 1 is a cross-sectional structural diagram showing an embodiment of the present invention;
Figure 2 is a cross-sectional diagram of the conventional structure, and Figure 3 is the reverse conduction type G.
FIG. 3 is a circuit diagram of a TO thyristor. 1... GTO thyristor section, 2... Diode section, 3, 8... Separation section, 4... Anode electrode, 7
, 9...Surface protection material.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ウエハの中央部と周辺部にGTOサイリスタ部
とダイオード部を逆並列の層構成で形成し、前記
GTOサイリスタ部とダイオード部に共通のアノ
ード電極及び個々のカソード電極とゲート電極を
設けた逆導通形GTOサイリスタにおいて、前記
GTOサイリスタとダイオード部の境界に夫々ベ
ベル構造になる溝を掘込み、この溝に表面保護材
を充填した分離部を設けた構造を特徴とする逆導
通形GTOサイリスタ。
A reverse conduction type in which a GTO thyristor part and a diode part are formed in an antiparallel layer structure in the center and periphery of the wafer, and a common anode electrode and individual cathode electrodes and gate electrodes are provided for the GTO thyristor part and diode part. A reverse conduction type GTO thyristor, characterized in that a groove having a bevel structure is dug at the boundary between the GTO thyristor and the diode portion, and a separation portion filled with a surface protection material is provided in the groove.
JP9279288U 1988-07-13 1988-07-13 Pending JPH0215748U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9279288U JPH0215748U (en) 1988-07-13 1988-07-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9279288U JPH0215748U (en) 1988-07-13 1988-07-13

Publications (1)

Publication Number Publication Date
JPH0215748U true JPH0215748U (en) 1990-01-31

Family

ID=31317234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9279288U Pending JPH0215748U (en) 1988-07-13 1988-07-13

Country Status (1)

Country Link
JP (1) JPH0215748U (en)

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