JPS60179055U - Gate turn-off thyristor - Google Patents
Gate turn-off thyristorInfo
- Publication number
- JPS60179055U JPS60179055U JP6738484U JP6738484U JPS60179055U JP S60179055 U JPS60179055 U JP S60179055U JP 6738484 U JP6738484 U JP 6738484U JP 6738484 U JP6738484 U JP 6738484U JP S60179055 U JPS60179055 U JP S60179055U
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- gate turn
- layer
- cathode
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
- Power Conversion In General (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図及び第２図はこの考案の一実施例を示すもので、
第１図は断面図、第２図は平面図、第３図及び第４図は
従来例を示す断面図及び平面図である。
１．２・・・ゲート電極、３・・・アノード電極、４０
．４１．４２・・・カソード電極。 。
補正 昭５９．８．３０
実用新案登録請求の範囲を次のように補正する。
Ｏ実用新案登録請求の範囲
Ｐ１Ｎ１Ｐ２Ｎ２の４層からなり、Ｐ２層中に低抵抗Ｐ
２＋＋層が埋込まれたゲートターンオフサイリスタにお
いて、前記Ｎ２層表面に形成されるカソード電極を複数
個に分割し、分割後の各カソード面の領域の電流特性を
計測して電流が集中されるその領域のカソード電極を電
気的に絶縁状態にし、他の全てのカソード電極は電気的
に接続状態となる ゛ようにした三とを特徴とするゲー
トターンオフサイリスタ。Figures 1 and 2 show an embodiment of this invention.
FIG. 1 is a sectional view, FIG. 2 is a plan view, and FIGS. 3 and 4 are a sectional view and a plan view showing a conventional example. 1.2... Gate electrode, 3... Anode electrode, 40
．． 41.42...Cathode electrode. . Amendment August 30, 1982 The scope of claims for utility model registration is amended as follows. O Utility Model Registration Claims Consists of four layers P1N1P2N2, with low resistance P in the P2 layer.
In a gate turn-off thyristor in which a 2++ layer is embedded, the cathode electrode formed on the surface of the N2 layer is divided into a plurality of parts, and the current characteristics of each cathode surface area after division are measured to determine where the current is concentrated. 3. A gate turn-off thyristor characterized in that a cathode electrode in one region is electrically insulated, and all other cathode electrodes are electrically connected.
Claims (1)
２＋＋層が埋込まれ、かつ前記Ｐ２層表面の中央部と外
周部に制御用ゲート電極が形成されたゲートターンオフ
サイリスタにおいて、前記Ｎ２層表面に形成されるカソ
ード電極を複数個に分割し、分割後の各カソード面の領
域の電流特性を計測して電流が集中されるその領域のカ
ソード電極を電気的に絶縁状態にし、他の全てのカソー
ド電極は電気的に接続状態となるようにしたことを特徴
とするゲートターンオフサイリスタ。Consists of 4 layers: P, N, P2N2, with low resistance P in 22 layers.
In the gate turn-off thyristor in which a 2++ layer is embedded and a control gate electrode is formed at the center and outer periphery of the surface of the P2 layer, the cathode electrode formed on the surface of the N2 layer is divided into a plurality of parts. After measuring the current characteristics of each region of the cathode surface, the cathode electrode in that region where the current is concentrated is electrically insulated, and all other cathode electrodes are electrically connected. A gate turn-off thyristor featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6738484U JPS60179055U (en) | 1984-05-09 | 1984-05-09 | Gate turn-off thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6738484U JPS60179055U (en) | 1984-05-09 | 1984-05-09 | Gate turn-off thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60179055U true JPS60179055U (en) | 1985-11-28 |
Family
ID=30601157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6738484U Pending JPS60179055U (en) | 1984-05-09 | 1984-05-09 | Gate turn-off thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60179055U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03108764A (en) * | 1989-04-11 | 1991-05-08 | Fuji Electric Co Ltd | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651867A (en) * | 1979-10-05 | 1981-05-09 | Hitachi Ltd | Manufacturing of semiconductor |
-
1984
- 1984-05-09 JP JP6738484U patent/JPS60179055U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651867A (en) * | 1979-10-05 | 1981-05-09 | Hitachi Ltd | Manufacturing of semiconductor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03108764A (en) * | 1989-04-11 | 1991-05-08 | Fuji Electric Co Ltd | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58448U (en) | thyristor | |
| JPS60179055U (en) | Gate turn-off thyristor | |
| JPS60163760U (en) | flat thyristor | |
| JPS597568U (en) | Multi-pole insulated terminal | |
| JPS59107156U (en) | High sensitivity thyristor | |
| JPS60116225U (en) | semiconductor ceramic capacitor | |
| JPS59166453U (en) | Gate turn-off thyristor with amplification gate structure | |
| JPS6138956U (en) | thyristor | |
| JPS60153548U (en) | Lateral transistor | |
| JPS59166452U (en) | Gate turn-off thyristor with amplification gate structure | |
| JPS5977218U (en) | Chip-shaped solid electrolytic capacitor | |
| JPS5937704U (en) | variable resistor | |
| JPH0369263U (en) | ||
| JPS60174258U (en) | Electric field controlled semiconductor device | |
| JPS59159962U (en) | Electrodes of semiconductor devices | |
| JPS5863703U (en) | chip resistor | |
| JPS6192057U (en) | ||
| JPS605109U (en) | High voltage capacitor | |
| JPS5839061U (en) | semiconductor integrated circuit | |
| JPH0289819U (en) | ||
| JPS60151127U (en) | electric double layer capacitor | |
| JPS5963450U (en) | Embedded gate type gate turn-off thyristor | |
| JPS63100853U (en) | ||
| JPS6081665U (en) | Stacked semiconductor high voltage rectifier | |
| JPS6134730U (en) | multilayer composite capacitor |