JPS5839061U - semiconductor integrated circuit - Google Patents
semiconductor integrated circuitInfo
- Publication number
- JPS5839061U JPS5839061U JP13303581U JP13303581U JPS5839061U JP S5839061 U JPS5839061 U JP S5839061U JP 13303581 U JP13303581 U JP 13303581U JP 13303581 U JP13303581 U JP 13303581U JP S5839061 U JPS5839061 U JP S5839061U
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- external connection
- insulating layers
- connection electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来技術による半導体集積回路の側面断面図、
第２図は本煮案の半導体集積回路の一実施例の側面断面
図である。
８・・・導体層、４・・・コンタクト部、１１・・・コ
ンタクト部、９・・・絶縁層、１０・・・コンタクト部
、６・・・引出電極、７・・・引出電極、２・・・回路
パターン部、３・・・電極部。Figure 1 is a side sectional view of a semiconductor integrated circuit according to the prior art.
FIG. 2 is a side cross-sectional view of an embodiment of a semiconductor integrated circuit according to the final version. 8... Conductor layer, 4... Contact part, 11... Contact part, 9... Insulating layer, 10... Contact part, 6... Leading electrode, 7... Leading electrode, 2 ...Circuit pattern part, 3...Electrode part.
Claims (1)
分と外部接続用電極構成部分との間に絶縁層を少（とも
二層有し、前記絶縁層の間に少くとも一層の導体層を有
し、前記導体層は少くとも１個の外部接続用電極構成部
分に接続されて成ることを特徴とする半導体集積回路。In the surface layer structure of a semiconductor integrated circuit, there is at least two insulating layers between the electric circuit component and the external connection electrode component, and there is at least one conductive layer between the insulating layers. . A semiconductor integrated circuit, wherein the conductor layer is connected to at least one external connection electrode component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13303581U JPS5839061U (en) | 1981-09-09 | 1981-09-09 | semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13303581U JPS5839061U (en) | 1981-09-09 | 1981-09-09 | semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5839061U true JPS5839061U (en) | 1983-03-14 |
Family
ID=29926522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13303581U Pending JPS5839061U (en) | 1981-09-09 | 1981-09-09 | semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839061U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006352136A (en) * | 2005-06-18 | 2006-12-28 | Samsung Electronics Co Ltd | Semiconductor ic equipped with power unit, semiconductor system equipped with semiconductor ic, and forming method for semiconductor ic |
-
1981
- 1981-09-09 JP JP13303581U patent/JPS5839061U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006352136A (en) * | 2005-06-18 | 2006-12-28 | Samsung Electronics Co Ltd | Semiconductor ic equipped with power unit, semiconductor system equipped with semiconductor ic, and forming method for semiconductor ic |
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