JPS6057133U - Wiring structure of semiconductor integrated circuit - Google Patents
Wiring structure of semiconductor integrated circuitInfo
- Publication number
- JPS6057133U JPS6057133U JP14982783U JP14982783U JPS6057133U JP S6057133 U JPS6057133 U JP S6057133U JP 14982783 U JP14982783 U JP 14982783U JP 14982783 U JP14982783 U JP 14982783U JP S6057133 U JPS6057133 U JP S6057133U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulating film
- integrated circuit
- semiconductor integrated
- wiring structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
図面は本考案を説明するための断面図である。
主な図番の説明、１・・・半導体基板、２，３は複数の
素子、４は第１の絶縁膜、５は第１の電極、６は第２の
絶縁膜、７は第２の電極である。The drawings are cross-sectional views for explaining the present invention. Explanation of main figure numbers: 1...semiconductor substrate, 2 and 3 are multiple elements, 4 is the first insulating film, 5 is the first electrode, 6 is the second insulating film, 7 is the second It is an electrode.
Claims (1)
表面を被覆する第１の絶縁膜と前記素子の各領域にオー
ミック接触し前記第１の絶縁膜上を延在される第１の電
極と前記第１の絶縁膜および第１の電極を被覆する第２
の絶縁膜と前記第１の電極と接続され第２の絶縁膜上を
延在される第２め電極とを具備する半導体集積回路に於
いて、前記第１の電極上に前記第２の電極を短絡して並
設し配線抵抗を減じることを特徴とする半導体集積回路
の配線構造。A semiconductor substrate, a plurality of elements formed on the substrate, a first insulating film covering the surface of the substrate, and a first electrode that is in ohmic contact with each region of the element and extends over the first insulating film. and a second insulating film covering the first insulating film and the first electrode.
and a second electrode connected to the first electrode and extending over the second insulating film, wherein the second electrode is connected to the first electrode and extends over the second insulating film. A wiring structure for a semiconductor integrated circuit characterized by short-circuiting and arranging them in parallel to reduce wiring resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14982783U JPS6057133U (en) | 1983-09-27 | 1983-09-27 | Wiring structure of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14982783U JPS6057133U (en) | 1983-09-27 | 1983-09-27 | Wiring structure of semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6057133U true JPS6057133U (en) | 1985-04-20 |
Family
ID=30332483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14982783U Pending JPS6057133U (en) | 1983-09-27 | 1983-09-27 | Wiring structure of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057133U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55141739A (en) * | 1979-04-23 | 1980-11-05 | Nec Corp | Semiconductor device |
-
1983
- 1983-09-27 JP JP14982783U patent/JPS6057133U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55141739A (en) * | 1979-04-23 | 1980-11-05 | Nec Corp | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5992937U (en) | input device | |
| JPS6057133U (en) | Wiring structure of semiconductor integrated circuit | |
| JPS60942U (en) | semiconductor equipment | |
| JPS58120662U (en) | Chippukiyariya | |
| JPS5853159U (en) | Amorphous semiconductor device | |
| JPS58142928U (en) | thick film capacitor | |
| JPS5812949U (en) | Multilayer wiring structure of semiconductor integrated circuits | |
| JPS6037257U (en) | photovoltaic element | |
| JPS6016568U (en) | photovoltaic device | |
| JPS6083258U (en) | Resin-encapsulated semiconductor device | |
| JPS6122370U (en) | photovoltaic element | |
| JPS5858328U (en) | electronic components | |
| JPS60156747U (en) | semiconductor equipment | |
| JPS5892763U (en) | Thick film multilayer substrate | |
| JPS59101459U (en) | Terminal structure of thick film wiring board | |
| JPS5929054U (en) | semiconductor equipment | |
| JPS6146755U (en) | semiconductor device | |
| JPS60144255U (en) | transistor | |
| JPS5948577U (en) | display panel | |
| JPS6115755U (en) | Semiconductor device with built-in resistor | |
| JPS59145083U (en) | hybrid integrated circuit | |
| JPS59125834U (en) | semiconductor equipment | |
| JPS60137450U (en) | semiconductor resistance device | |
| JPS60149148U (en) | Semiconductor device with multilayer wiring | |
| JPS60109354U (en) | Hybrid integrated circuit device |