JPS5866656U - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5866656U
JPS5866656U JP16073181U JP16073181U JPS5866656U JP S5866656 U JPS5866656 U JP S5866656U JP 16073181 U JP16073181 U JP 16073181U JP 16073181 U JP16073181 U JP 16073181U JP S5866656 U JPS5866656 U JP S5866656U
Authority
JP
Japan
Prior art keywords
thyristor
gate
turn
gate turn
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16073181U
Other languages
Japanese (ja)
Inventor
久保　武美
Original Assignee
株式会社明電舎
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社明電舎 filed Critical 株式会社明電舎
Priority to JP16073181U priority Critical patent/JPS5866656U/en
Publication of JPS5866656U publication Critical patent/JPS5866656U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の埋込ゲート形ＧＴＯサイリスタあ断面構
造図ａと埋込ゲート層平面図ｂ、第２図は本考案の一実
施例を示す断面構造図ａと平面図すである。 １・・・アノード電極、２・・・アノードエミツタ層、
３・・・アノードベース層、４・・・カソードベース層
、５・・・埋込ゲート層、９・・・カソード電極、１０
・・・ゲート電極、１２・・・窓、１４・・・アーノー
ドエミツタショート領域。FIG. 1 is a cross-sectional structural diagram a and a plan view b of a buried gate layer of a conventional buried gate type GTO thyristor, and FIG. 2 is a cross-sectional structural diagram a and a plan view showing an embodiment of the present invention. 1... Anode electrode, 2... Anode emitter layer,
3... Anode base layer, 4... Cathode base layer, 5... Buried gate layer, 9... Cathode electrode, 10
. . . Gate electrode, 12 . . . Window, 14 . . . Anode emitter short region.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] カソードベース層中に高濃度不純物にした埋込ゲート層
を有する埋込ゲート形ゲートターンオフサイリスタにお
いて、上記埋込ゲート層が有する主電流通流のための窓
部のうち、ターンオフ用ゲート電極から最も離れた領域
に対向するアノード側接合をアノードエミッタ構造とし
たことを特徴とするゲートターンオフサイリスタ。In a buried gate type gate turn-off thyristor having a buried gate layer with a high concentration of impurities in the cathode base layer, the window portion for main current flow in the buried gate layer is located closest to the turn-off gate electrode. A gate turn-off thyristor characterized in that an anode side junction facing a distant region has an anode emitter structure.
JP16073181U 1981-10-28 1981-10-28 Gate turn-off thyristor Pending JPS5866656U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16073181U JPS5866656U (en) 1981-10-28 1981-10-28 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16073181U JPS5866656U (en) 1981-10-28 1981-10-28 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5866656U true JPS5866656U (en) 1983-05-06

Family

ID=29953119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16073181U Pending JPS5866656U (en) 1981-10-28 1981-10-28 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5866656U (en)

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