JPS6435762U - - Google Patents
Info
- Publication number
- JPS6435762U JPS6435762U JP13077287U JP13077287U JPS6435762U JP S6435762 U JPS6435762 U JP S6435762U JP 13077287 U JP13077287 U JP 13077287U JP 13077287 U JP13077287 U JP 13077287U JP S6435762 U JPS6435762 U JP S6435762U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- emitter region
- emitter
- narrower
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Description
第１図乃至第４図は本考案に係るダイオードの
一実施例を説明するためのもので、第１図は本考
案のダイオードの基本的構造例を示す断面図、第
２図は第１図ダイオードのシンボル図、第３図は
第２図の等価シンボル図、第４図は本考案のダイ
オードの具体的構造例を示す断面図である。第５
図は従来のダイオードの構造例を示す断面図、第
６図は第５図ダイオードのシンボル図、第７図は
第６図の等価シンボル図である。
１０……ダイオード、１１……半導体基板、１
４……エミツタ領域、１５……ベース領域、１６
……コレクタ領域、１９……カソード、２１……
アノード。
1 to 4 are for explaining one embodiment of the diode according to the present invention. FIG. 1 is a cross-sectional view showing an example of the basic structure of the diode of the present invention, and FIG. FIG. 3 is a symbol diagram of a diode, FIG. 3 is an equivalent symbol diagram of FIG. 2, and FIG. 4 is a sectional view showing a specific structural example of the diode of the present invention. Fifth
The figure is a sectional view showing an example of the structure of a conventional diode, FIG. 6 is a symbol diagram of the diode shown in FIG. 5, and FIG. 7 is an equivalent symbol diagram of FIG. 6. 10...Diode, 11...Semiconductor substrate, 1
4... Emitter area, 15... Base area, 16
... Collector area, 19 ... Cathode, 21 ...
anode.
Claims (1)
板上に選択的に他導電型のベース領域を形成し、
このベース領域上に選択的に低濃度かつ一導電型
で、前記エミツタ領域よりも狹いコレクタ領域を
形成すると共に、エミツタ領域とベース領域とを
短絡接続し、エミツタ領域からアノードを、且つ
、コレクタ領域からカソードを取出したことを特
徴とするダイオード。 A base region of another conductivity type is selectively formed on a high concentration semiconductor substrate of one conductivity type which becomes an emitter region,
A collector region with a low concentration and one conductivity type, which is narrower than the emitter region, is selectively formed on the base region, and the emitter region and the base region are short-circuited, and the anode is connected from the emitter region, and the collector region is narrower than the emitter region. A diode characterized by having a cathode taken out from a region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13077287U JPS6435762U (en) | 1987-08-27 | 1987-08-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13077287U JPS6435762U (en) | 1987-08-27 | 1987-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6435762U true JPS6435762U (en) | 1989-03-03 |
Family
ID=31386238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13077287U Pending JPS6435762U (en) | 1987-08-27 | 1987-08-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6435762U (en) |
-
1987
- 1987-08-27 JP JP13077287U patent/JPS6435762U/ja active Pending
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