JPS5858361U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5858361U JPS5858361U JP15370481U JP15370481U JPS5858361U JP S5858361 U JPS5858361 U JP S5858361U JP 15370481 U JP15370481 U JP 15370481U JP 15370481 U JP15370481 U JP 15370481U JP S5858361 U JPS5858361 U JP S5858361U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- semiconductor
- conductivity type
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図Ａ、 Ｂは従来の半導体装置を示す図であって、
そのＡは一部分の路線的縦断面図、そのＢは一部分の路
線的平面図、第２図Ａ、 Ｂ及び第３図Ａ、 Ｂは本考
案による半導体装置の異なる一実施例を説明する図であ
る。1A and 1B are diagrams showing a conventional semiconductor device,
A is a longitudinal cross-sectional view of a portion, B is a plan view of a portion thereof, and FIGS. be.
Claims (1)
体層とｐ−ｎ接合を形成する前記第１−の半導体層に比
べて低い不純物濃度を有する第１の導電型とは反対の第
２の導電型の第２の半導体層を少くとも有する半導体装
置において、前記第２の半導体層の所定域に形成されて
該第２の半導体層における少数キャリヤを吸収する作用
をなす第１の合金属を形成する第１の金属層と、前記第
２、 の半導体層に少くとも形成されて前記第２の半
導体層に多数キャリアを供給する作用をなす第２の合金
層を前記第２の半導体層に形成する第２の金属層とを備
えたことを特徴とする半導体装置。A first semiconductor layer having a first conductivity type and a first conductivity type having a lower impurity concentration than the first semiconductor layer forming a p-n junction with the first semiconductor layer. In a semiconductor device having at least a second semiconductor layer of an opposite second conductivity type, a second semiconductor layer is formed in a predetermined area of the second semiconductor layer and acts to absorb minority carriers in the second semiconductor layer. a first metal layer forming an alloy metal of No. 1; and a second alloy layer formed at least on the second semiconductor layer and functioning to supply majority carriers to the second semiconductor layer. 1. A semiconductor device comprising: a second metal layer formed on the second semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15370481U JPS5858361U (en) | 1981-10-16 | 1981-10-16 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15370481U JPS5858361U (en) | 1981-10-16 | 1981-10-16 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5858361U true JPS5858361U (en) | 1983-04-20 |
| JPH0134356Y2 JPH0134356Y2 (en) | 1989-10-19 |
Family
ID=29946312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15370481U Granted JPS5858361U (en) | 1981-10-16 | 1981-10-16 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5858361U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000067330A1 (en) * | 1999-04-30 | 2000-11-09 | Rohm Co., Ltd. | Semiconductor device having bipolar transistors |
| WO2001020683A1 (en) * | 1999-09-09 | 2001-03-22 | Rohm Co., Ltd. | Semiconductor device |
| JP2011103484A (en) * | 2011-01-24 | 2011-05-26 | Rohm Co Ltd | Semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5055688U (en) * | 1973-09-18 | 1975-05-26 | ||
| JPS5074281A (en) * | 1973-11-05 | 1975-06-18 | ||
| JPS55148457A (en) * | 1979-05-07 | 1980-11-19 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device with electrode |
-
1981
- 1981-10-16 JP JP15370481U patent/JPS5858361U/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5055688U (en) * | 1973-09-18 | 1975-05-26 | ||
| JPS5074281A (en) * | 1973-11-05 | 1975-06-18 | ||
| JPS55148457A (en) * | 1979-05-07 | 1980-11-19 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device with electrode |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000067330A1 (en) * | 1999-04-30 | 2000-11-09 | Rohm Co., Ltd. | Semiconductor device having bipolar transistors |
| WO2001020683A1 (en) * | 1999-09-09 | 2001-03-22 | Rohm Co., Ltd. | Semiconductor device |
| JP2001085443A (en) * | 1999-09-09 | 2001-03-30 | Rohm Co Ltd | Semiconductor device |
| US6897546B1 (en) | 1999-09-09 | 2005-05-24 | Rohm Co., Ltd. | Semiconductor device including a functional element having a PN junction |
| JP4707203B2 (en) * | 1999-09-09 | 2011-06-22 | ローム株式会社 | Semiconductor device |
| JP2011103484A (en) * | 2011-01-24 | 2011-05-26 | Rohm Co Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0134356Y2 (en) | 1989-10-19 |
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